Enhanced nucleation in solid-phase crystallization of amorphous Si by imprint technology

Kenji Makihira, Tanemasa Asano

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

A method to enhance crystal nucleation at controlled sites in solid-phase crystallization of amorphous Si is demonstrated. The method uses imprint with Ni-coated Si tips prior to conventional furnace annealing of amorphous Si films deposited on SiO2 substrates. The incubation time for crystallization is found to be greatly reduced at sites imprinted with the tips. This enhanced nucleation can be used to form large crystal grains up to about 7 μm in diameter at controlled sites. Results obtained from imprint with SiO2-covered Si tips suggest that the enhanced nucleation results not from physical effects of indentation but from a chemical effect of metal transfered from the tip to the film surface.

Original languageEnglish
Pages (from-to)3774-3776
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number25
DOIs
Publication statusPublished - Jun 19 2000
Externally publishedYes

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solid phases
nucleation
crystallization
chemical effects
indentation
crystals
furnaces
annealing
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Enhanced nucleation in solid-phase crystallization of amorphous Si by imprint technology. / Makihira, Kenji; Asano, Tanemasa.

In: Applied Physics Letters, Vol. 76, No. 25, 19.06.2000, p. 3774-3776.

Research output: Contribution to journalArticle

Makihira, Kenji ; Asano, Tanemasa. / Enhanced nucleation in solid-phase crystallization of amorphous Si by imprint technology. In: Applied Physics Letters. 2000 ; Vol. 76, No. 25. pp. 3774-3776.
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