Enhanced performance of near-infrared photodetectors based on InGaAs nanowires enabled by a two-step growth method

Heng Zhang, Wei Wang, Senpo Yip, Dapan Li, Fangzhou Li, Changyong Lan, Fei Wang, Chuntai Liu, Johnny C. Ho

Research output: Contribution to journalArticlepeer-review

Abstract

Because of the tunable bandgap, high carrier mobility and strong interaction with light, ternary III-V nanowires (NWs) have been demonstrated with tremendous potential for advanced electronics and optoelectronics. However, their further performance enhancement and practical implementation are still a challenge in the presence of kinked morphology and surface coating of the nanowires. Here, we report the development of high-performance near-infrared photodetectors based on high-quality InGaAs nanowires enabled by the two-step chemical vapor deposition method. Importantly, the optimized In0.51Ga0.49As NW devices exhibit excellent photodetector performance at room temperature, with a responsivity of 7300 A W-1, a specific detectivity of 4.2 × 1010 Jones and an external quantum efficiency of 5.84 × 106% under 1550 nm irradiation. The rise and decay time constants are as efficient as 480 μs and 810 μs, respectively, constituting a record high performance among all arsenide-based nanowire photodetectors. Large-scale NW parallel-arrayed devices are also fabricated to illustrate their promising potential for next-generation ultrafast high-responsivity near-infrared photodetectors.

Original languageEnglish
Pages (from-to)17025-17033
Number of pages9
JournalJournal of Materials Chemistry C
Volume8
Issue number47
DOIs
Publication statusPublished - Dec 21 2020

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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