Enhanced solid-phase crystallization of amorphous Si by plasma treatment using reactive ion etching

Tanemasa Asano, Katsuhide Aoto, Yoshihiro Okada

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Solid-phase crystallization of amorphous Si (a-Si) films was found to be enhanced by oxygen- or nitrogen-plasma treatment prior to annealing for crystallization using a reactive ion etching system. Amorphous Si films were deposited by vacuum evaporation under ultrahigh-vacuum conditions. Plasma treatments were carried out using a conventional parallel-plate reactive ion etching apparatus. The incubation time for crystallization of a-Si was found to be greatly reduced by plasma treatment. Nitrogen-plasma treatment resulted in more enhanced crystallization than oxygen plasma. The incubation time was found to decrease with the increase of the self-bias voltage of the reactive ion etching system during plasma treatment. Impurity analysis suggests that metal atoms adsorbed during treatment at the surface of a-Si is one cause of the enhanced crystallization.

Original languageEnglish
Pages (from-to)1415-1419
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume36
Issue number3 SUPPL. B
Publication statusPublished - Mar 1997
Externally publishedYes

Fingerprint

Reactive ion etching
solid phases
Crystallization
etching
crystallization
Plasmas
Nitrogen plasma
ions
nitrogen plasma
oxygen plasma
Vacuum evaporation
Oxygen
Ultrahigh vacuum
Bias voltage
parallel plates
adatoms
ultrahigh vacuum
Annealing
Impurities
Atoms

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Enhanced solid-phase crystallization of amorphous Si by plasma treatment using reactive ion etching. / Asano, Tanemasa; Aoto, Katsuhide; Okada, Yoshihiro.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, Vol. 36, No. 3 SUPPL. B, 03.1997, p. 1415-1419.

Research output: Contribution to journalArticle

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