Enhanced solid-phase growth of β-FeSi2 by pre-amorphization

Y. Murakami, I. Tsunoda, H. Kido, A. Kenjo, T. Sadoh, M. Miyao, T. Yoshitake

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

Effects of Ar+ ion-irradiation on solid-phase growth of β-FeSi2 have been investigated. Fe (10 nm)/Si structures were irradiated with 20 keV Ar+ (5.0 × 1015 cm-2) at room temperature (RT) or 400 °C, and subsequently annealed at 800 °C. The results of X-ray diffraction measurements suggested that the formation of β-FeSi2 for the sample irradiated at RT was faster than that irradiated at 400 °C. However, Auger electron spectroscopy measurements showed that atomic mixing at the Fe/Si interface before annealing was larger for the sample irradiated at 400 °C. These results suggested that amorphization of the Si substrate, in addition to atomic mixing at the Fe/Si interface, enhanced formation of β-FeSi2, which was attributed to atomic rearrangement induced during defect relaxation in annealing process.

Original languageEnglish
Pages (from-to)304-307
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume206
DOIs
Publication statusPublished - May 2003
Event13th International conference on Ion beam modification of Mate - Kobe, Japan
Duration: Sep 1 2002Sep 6 2002

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

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