Enhanced solid-phase growth of β-FeSi2 by pre-amorphization

Y. Murakami, I. Tsunoda, H. Kido, A. Kenjo, Taizoh Sadoh, M. Miyao, Tsuyoshi Yoshitake

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

Effects of Ar+ ion-irradiation on solid-phase growth of β-FeSi2 have been investigated. Fe (10 nm)/Si structures were irradiated with 20 keV Ar+ (5.0 × 1015 cm-2) at room temperature (RT) or 400 °C, and subsequently annealed at 800 °C. The results of X-ray diffraction measurements suggested that the formation of β-FeSi2 for the sample irradiated at RT was faster than that irradiated at 400 °C. However, Auger electron spectroscopy measurements showed that atomic mixing at the Fe/Si interface before annealing was larger for the sample irradiated at 400 °C. These results suggested that amorphization of the Si substrate, in addition to atomic mixing at the Fe/Si interface, enhanced formation of β-FeSi2, which was attributed to atomic rearrangement induced during defect relaxation in annealing process.

Original languageEnglish
Pages (from-to)304-307
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume206
DOIs
Publication statusPublished - May 1 2003
Event13th International conference on Ion beam modification of Mate - Kobe, Japan
Duration: Sep 1 2002Sep 6 2002

Fingerprint

Amorphization
solid phases
Annealing
annealing
room temperature
Auger electron spectroscopy
Ion bombardment
ion irradiation
Auger spectroscopy
electron spectroscopy
X ray diffraction
Temperature
Defects
defects
Substrates
diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

Enhanced solid-phase growth of β-FeSi2 by pre-amorphization. / Murakami, Y.; Tsunoda, I.; Kido, H.; Kenjo, A.; Sadoh, Taizoh; Miyao, M.; Yoshitake, Tsuyoshi.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 206, 01.05.2003, p. 304-307.

Research output: Contribution to journalConference article

@article{2f9e243aa60c457997ea6ad0e29fc273,
title = "Enhanced solid-phase growth of β-FeSi2 by pre-amorphization",
abstract = "Effects of Ar+ ion-irradiation on solid-phase growth of β-FeSi2 have been investigated. Fe (10 nm)/Si structures were irradiated with 20 keV Ar+ (5.0 × 1015 cm-2) at room temperature (RT) or 400 °C, and subsequently annealed at 800 °C. The results of X-ray diffraction measurements suggested that the formation of β-FeSi2 for the sample irradiated at RT was faster than that irradiated at 400 °C. However, Auger electron spectroscopy measurements showed that atomic mixing at the Fe/Si interface before annealing was larger for the sample irradiated at 400 °C. These results suggested that amorphization of the Si substrate, in addition to atomic mixing at the Fe/Si interface, enhanced formation of β-FeSi2, which was attributed to atomic rearrangement induced during defect relaxation in annealing process.",
author = "Y. Murakami and I. Tsunoda and H. Kido and A. Kenjo and Taizoh Sadoh and M. Miyao and Tsuyoshi Yoshitake",
year = "2003",
month = "5",
day = "1",
doi = "10.1016/S0168-583X(03)00750-X",
language = "English",
volume = "206",
pages = "304--307",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",

}

TY - JOUR

T1 - Enhanced solid-phase growth of β-FeSi2 by pre-amorphization

AU - Murakami, Y.

AU - Tsunoda, I.

AU - Kido, H.

AU - Kenjo, A.

AU - Sadoh, Taizoh

AU - Miyao, M.

AU - Yoshitake, Tsuyoshi

PY - 2003/5/1

Y1 - 2003/5/1

N2 - Effects of Ar+ ion-irradiation on solid-phase growth of β-FeSi2 have been investigated. Fe (10 nm)/Si structures were irradiated with 20 keV Ar+ (5.0 × 1015 cm-2) at room temperature (RT) or 400 °C, and subsequently annealed at 800 °C. The results of X-ray diffraction measurements suggested that the formation of β-FeSi2 for the sample irradiated at RT was faster than that irradiated at 400 °C. However, Auger electron spectroscopy measurements showed that atomic mixing at the Fe/Si interface before annealing was larger for the sample irradiated at 400 °C. These results suggested that amorphization of the Si substrate, in addition to atomic mixing at the Fe/Si interface, enhanced formation of β-FeSi2, which was attributed to atomic rearrangement induced during defect relaxation in annealing process.

AB - Effects of Ar+ ion-irradiation on solid-phase growth of β-FeSi2 have been investigated. Fe (10 nm)/Si structures were irradiated with 20 keV Ar+ (5.0 × 1015 cm-2) at room temperature (RT) or 400 °C, and subsequently annealed at 800 °C. The results of X-ray diffraction measurements suggested that the formation of β-FeSi2 for the sample irradiated at RT was faster than that irradiated at 400 °C. However, Auger electron spectroscopy measurements showed that atomic mixing at the Fe/Si interface before annealing was larger for the sample irradiated at 400 °C. These results suggested that amorphization of the Si substrate, in addition to atomic mixing at the Fe/Si interface, enhanced formation of β-FeSi2, which was attributed to atomic rearrangement induced during defect relaxation in annealing process.

UR - http://www.scopus.com/inward/record.url?scp=0038243540&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038243540&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(03)00750-X

DO - 10.1016/S0168-583X(03)00750-X

M3 - Conference article

AN - SCOPUS:0038243540

VL - 206

SP - 304

EP - 307

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -