Enhanced stress relaxation in ultrathin SiGe-on-insulator by H+ -implantation-assisted oxidation

T. Sadoh; R. Matsuura; M. Miyao; M. Ninomiya; M. Nakamae; T. Enokida

doi:10.1063/1.1935028

Enhanced stress relaxation in ultrathin SiGe-on-insulator by H+ -implantation-assisted oxidation

T. Sadoh, R. Matsuura, M. Miyao, M. Ninomiya, M. Nakamae, T. Enokida

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Abstract

Effects of H+ implantation (≤5× 1016 cm-2) on stress relaxation in an oxidation-induced Ge condensation method have been investigated to form stress-relaxed ultrathin (~30 nm) SiGe-on-insulator (SGOI) virtual substrates. High-dose (≤ 1015 cm-2) implantation enhanced stress relaxation, which was attributed to bond breaking at the SiGeburied SiO2 interface. However, oxidation velocity was also enhanced due to irradiation defects. Two-step annealing (500 °C for 30 min and 850 °C for 60 min) before oxidation was proposed to remove irradiation defects. This achieved enhanced stress relaxation in ultrathin SGOI without changing oxidation velocity.

Original language	English
Article number	211901
Pages (from-to)	1-13
Number of pages	13
Journal	Applied Physics Letters
Volume	86
Issue number	21
DOIs	https://doi.org/10.1063/1.1935028
Publication status	Published - May 23 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1935028

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title = "Enhanced stress relaxation in ultrathin SiGe-on-insulator by H+ -implantation-assisted oxidation",

abstract = "Effects of H+ implantation (≤5× 1016 cm-2) on stress relaxation in an oxidation-induced Ge condensation method have been investigated to form stress-relaxed ultrathin (~30 nm) SiGe-on-insulator (SGOI) virtual substrates. High-dose (≤ 1015 cm-2) implantation enhanced stress relaxation, which was attributed to bond breaking at the SiGeburied SiO2 interface. However, oxidation velocity was also enhanced due to irradiation defects. Two-step annealing (500 °C for 30 min and 850 °C for 60 min) before oxidation was proposed to remove irradiation defects. This achieved enhanced stress relaxation in ultrathin SGOI without changing oxidation velocity.",

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AU - Sadoh, T.

AU - Matsuura, R.

AU - Miyao, M.

AU - Ninomiya, M.

AU - Nakamae, M.

AU - Enokida, T.

N1 - Funding Information: A part of this work was supported by the Special Coordination Funds for Promoting Science and Technology of the Ministry of Education, Culture Sports, Science, and Technology of Japan.

PY - 2005/5/23

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N2 - Effects of H+ implantation (≤5× 1016 cm-2) on stress relaxation in an oxidation-induced Ge condensation method have been investigated to form stress-relaxed ultrathin (~30 nm) SiGe-on-insulator (SGOI) virtual substrates. High-dose (≤ 1015 cm-2) implantation enhanced stress relaxation, which was attributed to bond breaking at the SiGeburied SiO2 interface. However, oxidation velocity was also enhanced due to irradiation defects. Two-step annealing (500 °C for 30 min and 850 °C for 60 min) before oxidation was proposed to remove irradiation defects. This achieved enhanced stress relaxation in ultrathin SGOI without changing oxidation velocity.

AB - Effects of H+ implantation (≤5× 1016 cm-2) on stress relaxation in an oxidation-induced Ge condensation method have been investigated to form stress-relaxed ultrathin (~30 nm) SiGe-on-insulator (SGOI) virtual substrates. High-dose (≤ 1015 cm-2) implantation enhanced stress relaxation, which was attributed to bond breaking at the SiGeburied SiO2 interface. However, oxidation velocity was also enhanced due to irradiation defects. Two-step annealing (500 °C for 30 min and 850 °C for 60 min) before oxidation was proposed to remove irradiation defects. This achieved enhanced stress relaxation in ultrathin SGOI without changing oxidation velocity.

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Enhanced stress relaxation in ultrathin SiGe-on-insulator by H+ -implantation-assisted oxidation

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