Abstract
Effects of H+ implantation (≤5× 1016 cm-2) on stress relaxation in an oxidation-induced Ge condensation method have been investigated to form stress-relaxed ultrathin (~30 nm) SiGe-on-insulator (SGOI) virtual substrates. High-dose (≤ 1015 cm-2) implantation enhanced stress relaxation, which was attributed to bond breaking at the SiGeburied SiO2 interface. However, oxidation velocity was also enhanced due to irradiation defects. Two-step annealing (500 °C for 30 min and 850 °C for 60 min) before oxidation was proposed to remove irradiation defects. This achieved enhanced stress relaxation in ultrathin SGOI without changing oxidation velocity.
Original language | English |
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Article number | 211901 |
Pages (from-to) | 1-13 |
Number of pages | 13 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 21 |
DOIs | |
Publication status | Published - May 23 2005 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)