Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield

Ning Han, Fengyun Wang, Alvin T. Hui, Jared J. Hou, Guangcun Shan, Fei Xiu, Tak Fu Hung, Johnny C. Ho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Solid-source chemical vapor deposition method is developed for the synthesis of crystalline GaAs NWs with high growth yield using Ni thin film as catalysts on amorphous SiO 2/Si substrates. The NW growth parameters are optimized at the source temperature of 900 °C, substrate temperature of 600 °C and H2 flow rate of 100 sccm for 30 min. The obtained NWs have a narrow distribution of diameters (21.0 ± 4.0 nm), with the length exceeding 10 μm. The NWs are grown along different crystallographic directions with low defect densities observed.

Original languageEnglish
Title of host publicationProceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011
Pages207-210
Number of pages4
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event3rd Asia Symposium on Quality Electronic Design, ASQED 2011 - Kuala Lumpur, Malaysia
Duration: Jul 19 2011Jul 20 2011

Publication series

NameProceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011

Other

Other3rd Asia Symposium on Quality Electronic Design, ASQED 2011
CountryMalaysia
CityKuala Lumpur
Period7/19/117/20/11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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