TY - GEN
T1 - Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield
AU - Han, Ning
AU - Wang, Fengyun
AU - Hui, Alvin T.
AU - Hou, Jared J.
AU - Shan, Guangcun
AU - Xiu, Fei
AU - Hung, Tak Fu
AU - Ho, Johnny C.
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - Solid-source chemical vapor deposition method is developed for the synthesis of crystalline GaAs NWs with high growth yield using Ni thin film as catalysts on amorphous SiO 2/Si substrates. The NW growth parameters are optimized at the source temperature of 900 °C, substrate temperature of 600 °C and H2 flow rate of 100 sccm for 30 min. The obtained NWs have a narrow distribution of diameters (21.0 ± 4.0 nm), with the length exceeding 10 μm. The NWs are grown along different crystallographic directions with low defect densities observed.
AB - Solid-source chemical vapor deposition method is developed for the synthesis of crystalline GaAs NWs with high growth yield using Ni thin film as catalysts on amorphous SiO 2/Si substrates. The NW growth parameters are optimized at the source temperature of 900 °C, substrate temperature of 600 °C and H2 flow rate of 100 sccm for 30 min. The obtained NWs have a narrow distribution of diameters (21.0 ± 4.0 nm), with the length exceeding 10 μm. The NWs are grown along different crystallographic directions with low defect densities observed.
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U2 - 10.1109/ASQED.2011.6111746
DO - 10.1109/ASQED.2011.6111746
M3 - Conference contribution
AN - SCOPUS:84862953852
SN - 9781457701443
T3 - Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011
SP - 207
EP - 210
BT - Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011
T2 - 3rd Asia Symposium on Quality Electronic Design, ASQED 2011
Y2 - 19 July 2011 through 20 July 2011
ER -