Enhancement of boron diffusion in silicon by continuous wave CO2 laser irradiation

Hiroshi Yamada-Kaneta, Katsuto Tanahashi, Koichi Kakimoto, Shozo Suto

Research output: Contribution to journalArticle

Abstract

We investigated the diffusion of boron (B) by the irradiation of cw CO 2 laser light. The diffusion of B was enhanced by irradiating the laser light during annealing in Ar/O2ambient. It was found that the irradiation of the laser light had the effect of enhances on the growth of an oxide layer. The possible mechanism of the enhanced diffusion is that the excess self-interstitials injected by oxidation at a laser-irradiated point assist the diffusion of B.

Original languageEnglish
Pages (from-to)5085-5088
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number8 A
DOIs
Publication statusPublished - Aug 6 2007

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Continuous wave lasers
continuous wave lasers
Laser beam effects
Boron
boron
Silicon
irradiation
Lasers
augmentation
silicon
lasers
Irradiation
interstitials
Annealing
Oxidation
oxidation
annealing
Oxides
oxides

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Enhancement of boron diffusion in silicon by continuous wave CO2 laser irradiation. / Yamada-Kaneta, Hiroshi; Tanahashi, Katsuto; Kakimoto, Koichi; Suto, Shozo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 8 A, 06.08.2007, p. 5085-5088.

Research output: Contribution to journalArticle

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