Enhancement of bulk nucleation in a-Si1-xGex on SiO2 for low-temperature solid-phase crystallization

Taizoh Sadoh, I. Tsunoda, T. Nagata, A. Kenjo, M. Miyao

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Nucleation phenomena in a-Si1-xGex films on SiO2 were examined in order to achieve low-temperature solid-phase crystallization. First, film thickness dependence of nucleation was investigated. The nucleation frequency per unit area increased with increasing film thickness, which was attributed to that bulk nucleation was dominant compared with interface or surface nucleation. Next, in order to enhance bulk nucleation in thin films, effects of the initial amorphicity modulation induced by Ar+ irradiation (25 keV, 1×1016 cm-2) before annealing were investigated. The incubation time for nucleation in pre-irradiated samples during subsequent annealing at 600 °C was significantly decreased to 1/20 of that without pre-irradiation, which was tentatively assigned to enhancement of atomic arrangement induced by densification of a-Si1-xGex films. It is expected that optimization of the irradiation conditions will realize low-temperature (<500 °C) formation of poly-Si1-xGex films on SiO2.

Original languageEnglish
Pages (from-to)96-100
Number of pages5
JournalThin Solid Films
Volume427
Issue number1-2
DOIs
Publication statusPublished - Mar 3 2003
EventE-MRS, K - Strasbourg, France
Duration: Jun 18 2003Jun 21 2003

Fingerprint

Crystallization
solid phases
Nucleation
nucleation
crystallization
augmentation
Temperature
Irradiation
irradiation
Film thickness
film thickness
Annealing
annealing
densification
Densification
Modulation
modulation
Thin films
optimization
thin films

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Enhancement of bulk nucleation in a-Si1-xGex on SiO2 for low-temperature solid-phase crystallization. / Sadoh, Taizoh; Tsunoda, I.; Nagata, T.; Kenjo, A.; Miyao, M.

In: Thin Solid Films, Vol. 427, No. 1-2, 03.03.2003, p. 96-100.

Research output: Contribution to journalConference article

Sadoh, Taizoh ; Tsunoda, I. ; Nagata, T. ; Kenjo, A. ; Miyao, M. / Enhancement of bulk nucleation in a-Si1-xGex on SiO2 for low-temperature solid-phase crystallization. In: Thin Solid Films. 2003 ; Vol. 427, No. 1-2. pp. 96-100.
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AU - Sadoh, Taizoh

AU - Tsunoda, I.

AU - Nagata, T.

AU - Kenjo, A.

AU - Miyao, M.

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N2 - Nucleation phenomena in a-Si1-xGex films on SiO2 were examined in order to achieve low-temperature solid-phase crystallization. First, film thickness dependence of nucleation was investigated. The nucleation frequency per unit area increased with increasing film thickness, which was attributed to that bulk nucleation was dominant compared with interface or surface nucleation. Next, in order to enhance bulk nucleation in thin films, effects of the initial amorphicity modulation induced by Ar+ irradiation (25 keV, 1×1016 cm-2) before annealing were investigated. The incubation time for nucleation in pre-irradiated samples during subsequent annealing at 600 °C was significantly decreased to 1/20 of that without pre-irradiation, which was tentatively assigned to enhancement of atomic arrangement induced by densification of a-Si1-xGex films. It is expected that optimization of the irradiation conditions will realize low-temperature (<500 °C) formation of poly-Si1-xGex films on SiO2.

AB - Nucleation phenomena in a-Si1-xGex films on SiO2 were examined in order to achieve low-temperature solid-phase crystallization. First, film thickness dependence of nucleation was investigated. The nucleation frequency per unit area increased with increasing film thickness, which was attributed to that bulk nucleation was dominant compared with interface or surface nucleation. Next, in order to enhance bulk nucleation in thin films, effects of the initial amorphicity modulation induced by Ar+ irradiation (25 keV, 1×1016 cm-2) before annealing were investigated. The incubation time for nucleation in pre-irradiated samples during subsequent annealing at 600 °C was significantly decreased to 1/20 of that without pre-irradiation, which was tentatively assigned to enhancement of atomic arrangement induced by densification of a-Si1-xGex films. It is expected that optimization of the irradiation conditions will realize low-temperature (<500 °C) formation of poly-Si1-xGex films on SiO2.

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