Enhancement of bulk nucleation in a-Si1-xGex on SiO2 for low-temperature solid-phase crystallization

T. Sadoh; I. Tsunoda; T. Nagata; A. Kenjo; M. Miyao

doi:10.1016/S0040-6090(02)01255-5

Enhancement of bulk nucleation in a-Si_1-xGe_x on SiO₂ for low-temperature solid-phase crystallization

T. Sadoh, I. Tsunoda, T. Nagata, A. Kenjo, M. Miyao

Electronic Devices

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Nucleation phenomena in a-Si_1-xGe_x films on SiO₂ were examined in order to achieve low-temperature solid-phase crystallization. First, film thickness dependence of nucleation was investigated. The nucleation frequency per unit area increased with increasing film thickness, which was attributed to that bulk nucleation was dominant compared with interface or surface nucleation. Next, in order to enhance bulk nucleation in thin films, effects of the initial amorphicity modulation induced by Ar⁺ irradiation (25 keV, 1×10¹⁶ cm^-2) before annealing were investigated. The incubation time for nucleation in pre-irradiated samples during subsequent annealing at 600 °C was significantly decreased to 1/20 of that without pre-irradiation, which was tentatively assigned to enhancement of atomic arrangement induced by densification of a-Si_1-xGe_x films. It is expected that optimization of the irradiation conditions will realize low-temperature (<500 °C) formation of poly-Si_1-xGe_x films on SiO₂.

Original language	English
Pages (from-to)	96-100
Number of pages	5
Journal	Thin Solid Films
Volume	427
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)01255-5
Publication status	Published - Mar 3 2003
Event	E-MRS, K - Strasbourg, France Duration: Jun 18 2003 → Jun 21 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Enhancement of bulk nucleation in a-Si1-xGex on SiO2 for low-temperature solid-phase crystallization",

abstract = "Nucleation phenomena in a-Si1-xGex films on SiO2 were examined in order to achieve low-temperature solid-phase crystallization. First, film thickness dependence of nucleation was investigated. The nucleation frequency per unit area increased with increasing film thickness, which was attributed to that bulk nucleation was dominant compared with interface or surface nucleation. Next, in order to enhance bulk nucleation in thin films, effects of the initial amorphicity modulation induced by Ar+ irradiation (25 keV, 1×1016 cm-2) before annealing were investigated. The incubation time for nucleation in pre-irradiated samples during subsequent annealing at 600 °C was significantly decreased to 1/20 of that without pre-irradiation, which was tentatively assigned to enhancement of atomic arrangement induced by densification of a-Si1-xGex films. It is expected that optimization of the irradiation conditions will realize low-temperature (<500 °C) formation of poly-Si1-xGex films on SiO2.",

author = "T. Sadoh and I. Tsunoda and T. Nagata and A. Kenjo and M. Miyao",

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T1 - Enhancement of bulk nucleation in a-Si1-xGex on SiO2 for low-temperature solid-phase crystallization

AU - Sadoh, T.

AU - Tsunoda, I.

AU - Nagata, T.

AU - Kenjo, A.

AU - Miyao, M.

PY - 2003/3/3

Y1 - 2003/3/3

N2 - Nucleation phenomena in a-Si1-xGex films on SiO2 were examined in order to achieve low-temperature solid-phase crystallization. First, film thickness dependence of nucleation was investigated. The nucleation frequency per unit area increased with increasing film thickness, which was attributed to that bulk nucleation was dominant compared with interface or surface nucleation. Next, in order to enhance bulk nucleation in thin films, effects of the initial amorphicity modulation induced by Ar+ irradiation (25 keV, 1×1016 cm-2) before annealing were investigated. The incubation time for nucleation in pre-irradiated samples during subsequent annealing at 600 °C was significantly decreased to 1/20 of that without pre-irradiation, which was tentatively assigned to enhancement of atomic arrangement induced by densification of a-Si1-xGex films. It is expected that optimization of the irradiation conditions will realize low-temperature (<500 °C) formation of poly-Si1-xGex films on SiO2.

AB - Nucleation phenomena in a-Si1-xGex films on SiO2 were examined in order to achieve low-temperature solid-phase crystallization. First, film thickness dependence of nucleation was investigated. The nucleation frequency per unit area increased with increasing film thickness, which was attributed to that bulk nucleation was dominant compared with interface or surface nucleation. Next, in order to enhance bulk nucleation in thin films, effects of the initial amorphicity modulation induced by Ar+ irradiation (25 keV, 1×1016 cm-2) before annealing were investigated. The incubation time for nucleation in pre-irradiated samples during subsequent annealing at 600 °C was significantly decreased to 1/20 of that without pre-irradiation, which was tentatively assigned to enhancement of atomic arrangement induced by densification of a-Si1-xGex films. It is expected that optimization of the irradiation conditions will realize low-temperature (<500 °C) formation of poly-Si1-xGex films on SiO2.

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DO - 10.1016/S0040-6090(02)01255-5

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VL - 427

SP - 96

EP - 100

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

T2 - E-MRS, K

Y2 - 18 June 2003 through 21 June 2003

ER -

Enhancement of bulk nucleation in a-Si_1-xGe_x on SiO₂ for low-temperature solid-phase crystallization

Abstract

All Science Journal Classification (ASJC) codes

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