Enhancement of critical current density in ErBa2Cu 3Oy thin films by post-annealing

Shigeru Horii, Ataru Ichinose, Masashi Mukaida, Kaname Matsumoto, Tohru Ohazama, Yutaka Yoshida, Jun Ichi Shimoyama, Kohji Kishio

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We report a remarkable increase in critical current density (Jc) by oxygen post-annealing for only a few tens of minutes in ErBa 2Cu3Oy films fabricated at two different pulsed-laser-deposition (PLD) temperatures of 720°C and 760°C. The Jc of these films were obviously enhanced to more than 1 MA·cm-2 in the annealing temperature range of 350°C-500°C in comparison with those of the as-deposited films (0.3-0.5 MA·cm-2). Even in a nonequilibrium process such as the PLD method, the homogenization of oxygen contents in films is crucial for enhancement of the films' critical current properties, which suggests that oxygen post-annealing is a practical process for improvement of critical current of PLD-REBa2Cu3Oy coated conductors.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number9 AB
DOIs
Publication statusPublished - Sep 15 2004
Externally publishedYes

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critical current
current density
annealing
augmentation
pulsed laser deposition
thin films
oxygen
homogenizing
conductors
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Enhancement of critical current density in ErBa2Cu 3Oy thin films by post-annealing. / Horii, Shigeru; Ichinose, Ataru; Mukaida, Masashi; Matsumoto, Kaname; Ohazama, Tohru; Yoshida, Yutaka; Shimoyama, Jun Ichi; Kishio, Kohji.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 43, No. 9 AB, 15.09.2004.

Research output: Contribution to journalArticle

Horii, Shigeru ; Ichinose, Ataru ; Mukaida, Masashi ; Matsumoto, Kaname ; Ohazama, Tohru ; Yoshida, Yutaka ; Shimoyama, Jun Ichi ; Kishio, Kohji. / Enhancement of critical current density in ErBa2Cu 3Oy thin films by post-annealing. In: Japanese Journal of Applied Physics, Part 2: Letters. 2004 ; Vol. 43, No. 9 AB.
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