TY - JOUR
T1 - Enhancement of in-field Jc in Gd1Ba2Cu3O7-δ coated conductor by using highly oriented IBAD substrate
AU - Inoue, Masayoshi
AU - Tanaka, Kenta
AU - Imamura, Kazutaka
AU - Higashikawa, Kohei
AU - Awaji, Satoshi
AU - Watanabe, Kazuo
AU - Taneda, Takahiro
AU - Yoshizumi, Masateru
AU - Izumi, Teruo
AU - Kiss, Takanobu
N1 - Funding Information:
This work was partly supported by the "METI: Development of Fundamental Technology for HTS Coils" and "JSPS: KAKENHI (24760235, 26420273)”.
Publisher Copyright:
© 2015 Published by Elsevier B.V.
PY - 2015
Y1 - 2015
N2 - We have investigated current transport properties in two G1dBa2Cu3O7-δ(GdBCO) coated conductors deposited on different quality of IBAD substrate, i.e., in-plane alignments of the substrate are 1.98° and 2.78°, respectively. From the comparison, Jc enhancement has been confirmed in wide temperature and magnetic field region in the sample using highly oriented IBAD substrate, whereas the irreversibility field and shape of pinning force density (Fp) does not change much. Furthermore, higher in-filed Jc than that of BaHfO3 doped GdBCO coated conductor deposited on standard IBAD substrate has also been observed in practical high field region at low temperature. These results indicate that the improvement of in-plane texturing in the substrate is still very effective even in such range of 2 to 3° to improve in-field Jc.
AB - We have investigated current transport properties in two G1dBa2Cu3O7-δ(GdBCO) coated conductors deposited on different quality of IBAD substrate, i.e., in-plane alignments of the substrate are 1.98° and 2.78°, respectively. From the comparison, Jc enhancement has been confirmed in wide temperature and magnetic field region in the sample using highly oriented IBAD substrate, whereas the irreversibility field and shape of pinning force density (Fp) does not change much. Furthermore, higher in-filed Jc than that of BaHfO3 doped GdBCO coated conductor deposited on standard IBAD substrate has also been observed in practical high field region at low temperature. These results indicate that the improvement of in-plane texturing in the substrate is still very effective even in such range of 2 to 3° to improve in-field Jc.
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U2 - 10.1016/j.phpro.2015.06.152
DO - 10.1016/j.phpro.2015.06.152
M3 - Conference article
AN - SCOPUS:84948427069
SN - 1875-3892
VL - 67
SP - 903
EP - 907
JO - Physics Procedia
JF - Physics Procedia
T2 - 25th International Cryogenic Engineering Conference and International Cryogenic Materials Conference, ICEC/ICMC 2014
Y2 - 7 July 2014 through 11 July 2014
ER -