Enhancement of local strain in Si microstructure by oxidation induced Ge condensation

M. Tanaka; T. Tanaka; T. Sadoh; J. Morioka; T. Kitamura; M. Miyao

doi:10.1149/1.2986768

Enhancement of local strain in Si microstructure by oxidation induced Ge condensation

M. Tanaka, T. Tanaka, T. Sadoh, J. Morioka, T. Kitamura, M. Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Effects of oxidation induced Ge condensation on local strains in Si microstructures induced by the SiGe stressor were investigated. The strain ratio in the Si microstructures increased by the Ge condensation, due to piled-up Ge atoms at SiO₂/SiGe interfaces. However, the strains were relaxed by defect generation, if the concentration of piled-up Ge exceeded a critical value (∼40%). Thus, a possibility to enhance local strains by oxidation induced Ge condensation was demonstrated.

Original language	English
Title of host publication	ECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publication	Materials, Processing, and Devices
Pages	189-192
Number of pages	4
Edition	10
DOIs	https://doi.org/10.1149/1.2986768
Publication status	Published - Dec 1 2008
Event	3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States Duration: Oct 12 2008 → Oct 17 2008

Publication series

Name	ECS Transactions
Number	10
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
Country	United States
City	Honolulu, HI
Period	10/12/08 → 10/17/08

Fingerprint

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Tanaka, M., Tanaka, T., Sadoh, T., Morioka, J., Kitamura, T., & Miyao, M. (2008). Enhancement of local strain in Si microstructure by oxidation induced Ge condensation. In ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices (10 ed., pp. 189-192). (ECS Transactions; Vol. 16, No. 10). https://doi.org/10.1149/1.2986768

Enhancement of local strain in Si microstructure by oxidation induced Ge condensation. / Tanaka, M.; Tanaka, T.; Sadoh, T.; Morioka, J.; Kitamura, T.; Miyao, M.

ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10. ed. 2008. p. 189-192 (ECS Transactions; Vol. 16, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tanaka, M, Tanaka, T, Sadoh, T, Morioka, J, Kitamura, T & Miyao, M 2008, Enhancement of local strain in Si microstructure by oxidation induced Ge condensation. in ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10 edn, ECS Transactions, no. 10, vol. 16, pp. 189-192, 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting, Honolulu, HI, United States, 10/12/08. https://doi.org/10.1149/1.2986768

@inproceedings{f44523495d3343109ab3de12c6473f97,

title = "Enhancement of local strain in Si microstructure by oxidation induced Ge condensation",

abstract = "Effects of oxidation induced Ge condensation on local strains in Si microstructures induced by the SiGe stressor were investigated. The strain ratio in the Si microstructures increased by the Ge condensation, due to piled-up Ge atoms at SiO2/SiGe interfaces. However, the strains were relaxed by defect generation, if the concentration of piled-up Ge exceeded a critical value (∼40{\%}). Thus, a possibility to enhance local strains by oxidation induced Ge condensation was demonstrated.",

author = "M. Tanaka and T. Tanaka and T. Sadoh and J. Morioka and T. Kitamura and M. Miyao",

year = "2008",

month = "12",

day = "1",

doi = "10.1149/1.2986768",

language = "English",

isbn = "9781566776561",

series = "ECS Transactions",

number = "10",

pages = "189--192",

booktitle = "ECS Transactions - SiGe, Ge, and Related Compounds 3",

edition = "10",

}

TY - GEN

T1 - Enhancement of local strain in Si microstructure by oxidation induced Ge condensation

AU - Tanaka, M.

AU - Tanaka, T.

AU - Sadoh, T.

AU - Morioka, J.

AU - Kitamura, T.

AU - Miyao, M.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Effects of oxidation induced Ge condensation on local strains in Si microstructures induced by the SiGe stressor were investigated. The strain ratio in the Si microstructures increased by the Ge condensation, due to piled-up Ge atoms at SiO2/SiGe interfaces. However, the strains were relaxed by defect generation, if the concentration of piled-up Ge exceeded a critical value (∼40%). Thus, a possibility to enhance local strains by oxidation induced Ge condensation was demonstrated.

AB - Effects of oxidation induced Ge condensation on local strains in Si microstructures induced by the SiGe stressor were investigated. The strain ratio in the Si microstructures increased by the Ge condensation, due to piled-up Ge atoms at SiO2/SiGe interfaces. However, the strains were relaxed by defect generation, if the concentration of piled-up Ge exceeded a critical value (∼40%). Thus, a possibility to enhance local strains by oxidation induced Ge condensation was demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=63149132021&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63149132021&partnerID=8YFLogxK

U2 - 10.1149/1.2986768

DO - 10.1149/1.2986768

M3 - Conference contribution

AN - SCOPUS:63149132021

SN - 9781566776561

T3 - ECS Transactions

SP - 189

EP - 192

BT - ECS Transactions - SiGe, Ge, and Related Compounds 3

ER -

Access to Document

10.1149/1.2986768