Enhancement of local strain in Si microstructure by oxidation induced Ge condensation

M. Tanaka, T. Tanaka, T. Sadoh, J. Morioka, T. Kitamura, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Effects of oxidation induced Ge condensation on local strains in Si microstructures induced by the SiGe stressor were investigated. The strain ratio in the Si microstructures increased by the Ge condensation, due to piled-up Ge atoms at SiO2/SiGe interfaces. However, the strains were relaxed by defect generation, if the concentration of piled-up Ge exceeded a critical value (∼40%). Thus, a possibility to enhance local strains by oxidation induced Ge condensation was demonstrated.

Original languageEnglish
Title of host publicationECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publicationMaterials, Processing, and Devices
Pages189-192
Number of pages4
Edition10
DOIs
Publication statusPublished - Dec 1 2008
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: Oct 12 2008Oct 17 2008

Publication series

NameECS Transactions
Number10
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/12/0810/17/08

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Tanaka, M., Tanaka, T., Sadoh, T., Morioka, J., Kitamura, T., & Miyao, M. (2008). Enhancement of local strain in Si microstructure by oxidation induced Ge condensation. In ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices (10 ed., pp. 189-192). (ECS Transactions; Vol. 16, No. 10). https://doi.org/10.1149/1.2986768