Abstract
Effects of oxidation induced Ge condensation on local strains in Si microstructures induced by the SiGe stressor were investigated. The strain ratio in the Si microstructures increased by the Ge condensation, due to piled-up Ge atoms at SiO2/SiGe interfaces. However, the strains were relaxed by defect generation, if the concentration of piled-up Ge exceeded a critical value (∼40%). Thus, a possibility to enhance local strains by oxidation induced Ge condensation was demonstrated.
| Original language | English |
|---|---|
| Title of host publication | ECS Transactions - SiGe, Ge, and Related Compounds 3 |
| Subtitle of host publication | Materials, Processing, and Devices |
| Pages | 189-192 |
| Number of pages | 4 |
| Edition | 10 |
| DOIs | |
| Publication status | Published - Dec 1 2008 |
| Event | 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States Duration: Oct 12 2008 → Oct 17 2008 |
Publication series
| Name | ECS Transactions |
|---|---|
| Number | 10 |
| Volume | 16 |
| ISSN (Print) | 1938-5862 |
| ISSN (Electronic) | 1938-6737 |
Other
| Other | 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting |
|---|---|
| Country | United States |
| City | Honolulu, HI |
| Period | 10/12/08 → 10/17/08 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Enhancement of local strain in Si microstructure by oxidation induced Ge condensation. / Tanaka, M.; Tanaka, T.; Sadoh, Taizoh; Morioka, J.; Kitamura, T.; Miyao, M.
ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10. ed. 2008. p. 189-192 (ECS Transactions; Vol. 16, No. 10).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Enhancement of local strain in Si microstructure by oxidation induced Ge condensation
AU - Tanaka, M.
AU - Tanaka, T.
AU - Sadoh, Taizoh
AU - Morioka, J.
AU - Kitamura, T.
AU - Miyao, M.
PY - 2008/12/1
Y1 - 2008/12/1
N2 - Effects of oxidation induced Ge condensation on local strains in Si microstructures induced by the SiGe stressor were investigated. The strain ratio in the Si microstructures increased by the Ge condensation, due to piled-up Ge atoms at SiO2/SiGe interfaces. However, the strains were relaxed by defect generation, if the concentration of piled-up Ge exceeded a critical value (∼40%). Thus, a possibility to enhance local strains by oxidation induced Ge condensation was demonstrated.
AB - Effects of oxidation induced Ge condensation on local strains in Si microstructures induced by the SiGe stressor were investigated. The strain ratio in the Si microstructures increased by the Ge condensation, due to piled-up Ge atoms at SiO2/SiGe interfaces. However, the strains were relaxed by defect generation, if the concentration of piled-up Ge exceeded a critical value (∼40%). Thus, a possibility to enhance local strains by oxidation induced Ge condensation was demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=63149132021&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=63149132021&partnerID=8YFLogxK
U2 - 10.1149/1.2986768
DO - 10.1149/1.2986768
M3 - Conference contribution
SN - 9781566776561
T3 - ECS Transactions
SP - 189
EP - 192
BT - ECS Transactions - SiGe, Ge, and Related Compounds 3
ER -