TY - GEN
T1 - Enhancement of local strain in Si microstructure by oxidation induced Ge condensation
AU - Tanaka, M.
AU - Tanaka, T.
AU - Sadoh, T.
AU - Morioka, J.
AU - Kitamura, T.
AU - Miyao, M.
PY - 2008/12/1
Y1 - 2008/12/1
N2 - Effects of oxidation induced Ge condensation on local strains in Si microstructures induced by the SiGe stressor were investigated. The strain ratio in the Si microstructures increased by the Ge condensation, due to piled-up Ge atoms at SiO2/SiGe interfaces. However, the strains were relaxed by defect generation, if the concentration of piled-up Ge exceeded a critical value (∼40%). Thus, a possibility to enhance local strains by oxidation induced Ge condensation was demonstrated.
AB - Effects of oxidation induced Ge condensation on local strains in Si microstructures induced by the SiGe stressor were investigated. The strain ratio in the Si microstructures increased by the Ge condensation, due to piled-up Ge atoms at SiO2/SiGe interfaces. However, the strains were relaxed by defect generation, if the concentration of piled-up Ge exceeded a critical value (∼40%). Thus, a possibility to enhance local strains by oxidation induced Ge condensation was demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=63149132021&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=63149132021&partnerID=8YFLogxK
U2 - 10.1149/1.2986768
DO - 10.1149/1.2986768
M3 - Conference contribution
AN - SCOPUS:63149132021
SN - 9781566776561
T3 - ECS Transactions
SP - 189
EP - 192
BT - ECS Transactions - SiGe, Ge, and Related Compounds 3
T2 - 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
Y2 - 12 October 2008 through 17 October 2008
ER -