Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Influences of crystallinity in the precursor on metal-induced lateral crystallization of a-Si on SiO2 have been investigated. It was found that the growth velocity during low temperature annealing (approx. 550 °C) could be enhanced by the pre-annealing treatment (300̃600 °C). This result triggered off the idea of MILC in multi-layered structure, i.e. a-Ge/a-Si/Ni-pattern/SiO2. Utilization of this structure successfully enhanced MILC growth velocity. This is because crystal nucleation initiated in a-Ge modulated crystallinity in the precursor (a-Si). As a result, poly-Si with large grains (approx. 10 μm) was achieved in a short time annealing (<5 h). This will be a powerful tool to realize large poly-Si layers on insulating films for high efficiency solar cells and system-in-displays.

Original languageEnglish
Pages (from-to)324-327
Number of pages4
JournalThin Solid Films
Volume451-452
DOIs
Publication statusPublished - Mar 22 2004
EventProceedings of Symposium D on Thin Film and Nano-Structured - Strasbourg, France
Duration: Jun 10 2003Jun 13 2003

Fingerprint

Crystallization
Metals
Annealing
crystallization
Polysilicon
annealing
augmentation
crystallinity
metals
Solar system
solar system
Solar cells
Nucleation
solar cells
Display devices
nucleation
Crystals
crystals
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure. / Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.

In: Thin Solid Films, Vol. 451-452, 22.03.2004, p. 324-327.

Research output: Contribution to journalConference article

Kanno, Hiroshi ; Kenjo, Atsushi ; Sadoh, Taizoh ; Miyao, Masanobu. / Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure. In: Thin Solid Films. 2004 ; Vol. 451-452. pp. 324-327.
@article{924a7744fe4d49f89197220edddf96f5,
title = "Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure",
abstract = "Influences of crystallinity in the precursor on metal-induced lateral crystallization of a-Si on SiO2 have been investigated. It was found that the growth velocity during low temperature annealing (approx. 550 °C) could be enhanced by the pre-annealing treatment (300̃600 °C). This result triggered off the idea of MILC in multi-layered structure, i.e. a-Ge/a-Si/Ni-pattern/SiO2. Utilization of this structure successfully enhanced MILC growth velocity. This is because crystal nucleation initiated in a-Ge modulated crystallinity in the precursor (a-Si). As a result, poly-Si with large grains (approx. 10 μm) was achieved in a short time annealing (<5 h). This will be a powerful tool to realize large poly-Si layers on insulating films for high efficiency solar cells and system-in-displays.",
author = "Hiroshi Kanno and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",
year = "2004",
month = "3",
day = "22",
doi = "10.1016/j.tsf.2003.11.059",
language = "English",
volume = "451-452",
pages = "324--327",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure

AU - Kanno, Hiroshi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2004/3/22

Y1 - 2004/3/22

N2 - Influences of crystallinity in the precursor on metal-induced lateral crystallization of a-Si on SiO2 have been investigated. It was found that the growth velocity during low temperature annealing (approx. 550 °C) could be enhanced by the pre-annealing treatment (300̃600 °C). This result triggered off the idea of MILC in multi-layered structure, i.e. a-Ge/a-Si/Ni-pattern/SiO2. Utilization of this structure successfully enhanced MILC growth velocity. This is because crystal nucleation initiated in a-Ge modulated crystallinity in the precursor (a-Si). As a result, poly-Si with large grains (approx. 10 μm) was achieved in a short time annealing (<5 h). This will be a powerful tool to realize large poly-Si layers on insulating films for high efficiency solar cells and system-in-displays.

AB - Influences of crystallinity in the precursor on metal-induced lateral crystallization of a-Si on SiO2 have been investigated. It was found that the growth velocity during low temperature annealing (approx. 550 °C) could be enhanced by the pre-annealing treatment (300̃600 °C). This result triggered off the idea of MILC in multi-layered structure, i.e. a-Ge/a-Si/Ni-pattern/SiO2. Utilization of this structure successfully enhanced MILC growth velocity. This is because crystal nucleation initiated in a-Ge modulated crystallinity in the precursor (a-Si). As a result, poly-Si with large grains (approx. 10 μm) was achieved in a short time annealing (<5 h). This will be a powerful tool to realize large poly-Si layers on insulating films for high efficiency solar cells and system-in-displays.

UR - http://www.scopus.com/inward/record.url?scp=17644441875&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17644441875&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2003.11.059

DO - 10.1016/j.tsf.2003.11.059

M3 - Conference article

AN - SCOPUS:17644441875

VL - 451-452

SP - 324

EP - 327

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -