Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure

Hiroshi Kanno; Atsushi Kenjo; Taizoh Sadoh; Masanobu Miyao

doi:10.1016/j.tsf.2003.11.059

Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO₂ layered structure

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Influences of crystallinity in the precursor on metal-induced lateral crystallization of a-Si on SiO₂ have been investigated. It was found that the growth velocity during low temperature annealing (approx. 550 °C) could be enhanced by the pre-annealing treatment (300̃600 °C). This result triggered off the idea of MILC in multi-layered structure, i.e. a-Ge/a-Si/Ni-pattern/SiO₂. Utilization of this structure successfully enhanced MILC growth velocity. This is because crystal nucleation initiated in a-Ge modulated crystallinity in the precursor (a-Si). As a result, poly-Si with large grains (approx. 10 μm) was achieved in a short time annealing (<5 h). This will be a powerful tool to realize large poly-Si layers on insulating films for high efficiency solar cells and system-in-displays.

Original language	English
Pages (from-to)	324-327
Number of pages	4
Journal	Thin Solid Films
Volume	451-452
DOIs	https://doi.org/10.1016/j.tsf.2003.11.059
Publication status	Published - Mar 22 2004
Event	Proceedings of Symposium D on Thin Film and Nano-Structured - Strasbourg, France Duration: Jun 10 2003 → Jun 13 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2003.11.059

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@article{924a7744fe4d49f89197220edddf96f5,

title = "Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure",

abstract = "Influences of crystallinity in the precursor on metal-induced lateral crystallization of a-Si on SiO2 have been investigated. It was found that the growth velocity during low temperature annealing (approx. 550 °C) could be enhanced by the pre-annealing treatment (30{\~0}600 °C). This result triggered off the idea of MILC in multi-layered structure, i.e. a-Ge/a-Si/Ni-pattern/SiO2. Utilization of this structure successfully enhanced MILC growth velocity. This is because crystal nucleation initiated in a-Ge modulated crystallinity in the precursor (a-Si). As a result, poly-Si with large grains (approx. 10 μm) was achieved in a short time annealing (<5 h). This will be a powerful tool to realize large poly-Si layers on insulating films for high efficiency solar cells and system-in-displays.",

author = "Hiroshi Kanno and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",

note = "Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.; Proceedings of Symposium D on Thin Film and Nano-Structured ; Conference date: 10-06-2003 Through 13-06-2003",

year = "2004",

month = mar,

day = "22",

doi = "10.1016/j.tsf.2003.11.059",

language = "English",

volume = "451-452",

pages = "324--327",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure

AU - Kanno, Hiroshi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

N1 - Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2004/3/22

Y1 - 2004/3/22

N2 - Influences of crystallinity in the precursor on metal-induced lateral crystallization of a-Si on SiO2 have been investigated. It was found that the growth velocity during low temperature annealing (approx. 550 °C) could be enhanced by the pre-annealing treatment (300̃600 °C). This result triggered off the idea of MILC in multi-layered structure, i.e. a-Ge/a-Si/Ni-pattern/SiO2. Utilization of this structure successfully enhanced MILC growth velocity. This is because crystal nucleation initiated in a-Ge modulated crystallinity in the precursor (a-Si). As a result, poly-Si with large grains (approx. 10 μm) was achieved in a short time annealing (<5 h). This will be a powerful tool to realize large poly-Si layers on insulating films for high efficiency solar cells and system-in-displays.

AB - Influences of crystallinity in the precursor on metal-induced lateral crystallization of a-Si on SiO2 have been investigated. It was found that the growth velocity during low temperature annealing (approx. 550 °C) could be enhanced by the pre-annealing treatment (300̃600 °C). This result triggered off the idea of MILC in multi-layered structure, i.e. a-Ge/a-Si/Ni-pattern/SiO2. Utilization of this structure successfully enhanced MILC growth velocity. This is because crystal nucleation initiated in a-Ge modulated crystallinity in the precursor (a-Si). As a result, poly-Si with large grains (approx. 10 μm) was achieved in a short time annealing (<5 h). This will be a powerful tool to realize large poly-Si layers on insulating films for high efficiency solar cells and system-in-displays.

UR - http://www.scopus.com/inward/record.url?scp=17644441875&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17644441875&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2003.11.059

DO - 10.1016/j.tsf.2003.11.059

M3 - Conference article

AN - SCOPUS:17644441875

SN - 0040-6090

VL - 451-452

SP - 324

EP - 327

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of Symposium D on Thin Film and Nano-Structured

Y2 - 10 June 2003 through 13 June 2003

ER -

Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO₂ layered structure

Abstract

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