Enhancement of photoresponse properties of β-FeSi2/Si heterojunctions by Al doping

Yoshihito Maeda; Yoshikazu Terai; Masaru Itakura

doi:10.1016/j.optmat.2004.08.036

Enhancement of photoresponse properties of β-FeSi₂/Si heterojunctions by Al doping

Yoshihito Maeda, Yoshikazu Terai, Masaru Itakura

Materials Physics and Engineering

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

We have succeeded in enhancing the photovoltaic properties of p-n heterojunctions using β-FeSi₂/Si(1 0 0) by doping Al into β-FeSi₂. Raman spectroscopy, Rutherford backscattering spectroscopy (RBS) and transmission electron microscope (TEM) observations revealed that Al doping contributes to the synthesis of a less defective interface and epitaxial growth of β-FeSi₂ on Si(1 0 0). This feature of epitaxial growth may reduce the recombination rate of electron-hole pairs near the depletion region, such that the photoresponse can be enhanced. We observed a significant photoelectric response corresponding to the interband transition near the band-gap energy of β-FeSi₂. This effect of the Al doping can be used in IR-photoelectric cells.

Original language	English
Pages (from-to)	920-924
Number of pages	5
Journal	Optical Materials
Volume	27
Issue number	5
DOIs	https://doi.org/10.1016/j.optmat.2004.08.036
Publication status	Published - Feb 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Computer Science(all)
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

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title = "Enhancement of photoresponse properties of β-FeSi2/Si heterojunctions by Al doping",

abstract = "We have succeeded in enhancing the photovoltaic properties of p-n heterojunctions using β-FeSi2/Si(1 0 0) by doping Al into β-FeSi2. Raman spectroscopy, Rutherford backscattering spectroscopy (RBS) and transmission electron microscope (TEM) observations revealed that Al doping contributes to the synthesis of a less defective interface and epitaxial growth of β-FeSi2 on Si(1 0 0). This feature of epitaxial growth may reduce the recombination rate of electron-hole pairs near the depletion region, such that the photoresponse can be enhanced. We observed a significant photoelectric response corresponding to the interband transition near the band-gap energy of β-FeSi2. This effect of the Al doping can be used in IR-photoelectric cells.",

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T1 - Enhancement of photoresponse properties of β-FeSi2/Si heterojunctions by Al doping

AU - Maeda, Yoshihito

AU - Terai, Yoshikazu

AU - Itakura, Masaru

PY - 2005/2

Y1 - 2005/2

N2 - We have succeeded in enhancing the photovoltaic properties of p-n heterojunctions using β-FeSi2/Si(1 0 0) by doping Al into β-FeSi2. Raman spectroscopy, Rutherford backscattering spectroscopy (RBS) and transmission electron microscope (TEM) observations revealed that Al doping contributes to the synthesis of a less defective interface and epitaxial growth of β-FeSi2 on Si(1 0 0). This feature of epitaxial growth may reduce the recombination rate of electron-hole pairs near the depletion region, such that the photoresponse can be enhanced. We observed a significant photoelectric response corresponding to the interband transition near the band-gap energy of β-FeSi2. This effect of the Al doping can be used in IR-photoelectric cells.

AB - We have succeeded in enhancing the photovoltaic properties of p-n heterojunctions using β-FeSi2/Si(1 0 0) by doping Al into β-FeSi2. Raman spectroscopy, Rutherford backscattering spectroscopy (RBS) and transmission electron microscope (TEM) observations revealed that Al doping contributes to the synthesis of a less defective interface and epitaxial growth of β-FeSi2 on Si(1 0 0). This feature of epitaxial growth may reduce the recombination rate of electron-hole pairs near the depletion region, such that the photoresponse can be enhanced. We observed a significant photoelectric response corresponding to the interband transition near the band-gap energy of β-FeSi2. This effect of the Al doping can be used in IR-photoelectric cells.

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