We have succeeded in enhancing the photovoltaic properties of p-n heterojunctions using β-FeSi2/Si(1 0 0) by doping Al into β-FeSi2. Raman spectroscopy, Rutherford backscattering spectroscopy (RBS) and transmission electron microscope (TEM) observations revealed that Al doping contributes to the synthesis of a less defective interface and epitaxial growth of β-FeSi2 on Si(1 0 0). This feature of epitaxial growth may reduce the recombination rate of electron-hole pairs near the depletion region, such that the photoresponse can be enhanced. We observed a significant photoelectric response corresponding to the interband transition near the band-gap energy of β-FeSi2. This effect of the Al doping can be used in IR-photoelectric cells.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Organic Chemistry
- Inorganic Chemistry
- Electrical and Electronic Engineering