TY - JOUR
T1 - Enhancement of photoresponse properties of β-FeSi2/Si heterojunctions by Al doping
AU - Maeda, Yoshihito
AU - Terai, Yoshikazu
AU - Itakura, Masaru
N1 - Funding Information:
The authors would like to thank Professors K. Miyao and T. Sadoh of Kyushu University for discussing crystalline growth. The TEM observations were supported by the Nanotechnology Support Projects 2004, the Ministry of Education, Culture, Sports, Science and Technology. A part of this study was supported by the 21st century COE program and the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology.
PY - 2005/2
Y1 - 2005/2
N2 - We have succeeded in enhancing the photovoltaic properties of p-n heterojunctions using β-FeSi2/Si(1 0 0) by doping Al into β-FeSi2. Raman spectroscopy, Rutherford backscattering spectroscopy (RBS) and transmission electron microscope (TEM) observations revealed that Al doping contributes to the synthesis of a less defective interface and epitaxial growth of β-FeSi2 on Si(1 0 0). This feature of epitaxial growth may reduce the recombination rate of electron-hole pairs near the depletion region, such that the photoresponse can be enhanced. We observed a significant photoelectric response corresponding to the interband transition near the band-gap energy of β-FeSi2. This effect of the Al doping can be used in IR-photoelectric cells.
AB - We have succeeded in enhancing the photovoltaic properties of p-n heterojunctions using β-FeSi2/Si(1 0 0) by doping Al into β-FeSi2. Raman spectroscopy, Rutherford backscattering spectroscopy (RBS) and transmission electron microscope (TEM) observations revealed that Al doping contributes to the synthesis of a less defective interface and epitaxial growth of β-FeSi2 on Si(1 0 0). This feature of epitaxial growth may reduce the recombination rate of electron-hole pairs near the depletion region, such that the photoresponse can be enhanced. We observed a significant photoelectric response corresponding to the interband transition near the band-gap energy of β-FeSi2. This effect of the Al doping can be used in IR-photoelectric cells.
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U2 - 10.1016/j.optmat.2004.08.036
DO - 10.1016/j.optmat.2004.08.036
M3 - Article
AN - SCOPUS:13444301362
VL - 27
SP - 920
EP - 924
JO - Optical Materials
JF - Optical Materials
SN - 0925-3467
IS - 5
ER -