The enhancement of remanent polarization of bismuth titanate (Bi4Ti3O12; BIT)-based thin films by Ti-site substitution using ions with higher charge valences was discussed. It was found that charge-compensative ion substitution using higher-valent ions than that Ti4+ enhanced the Pr value of BIT and BLnT films without change in the Ec value. The analysis showed that ion substitution by the higher-valent cations lowered the leakage current of BIT film.
|Number of pages||13|
|Publication status||Published - 2003|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials