Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures

T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, M. Miyao

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Strain-induced enhancement of carrier mobility is essential for achieving high-speed transistors. The effects of thermal-annealing (temperature: 400-1150°C) and ultraviolet (UV) laser-annealing (wavelength: 248 nm, temperature: 30-400°C) on strain-enhancement in Si-pillars covered with Si 3N 4 stress-liners by plasma-enhanced chemical vapor deposition are investigated. Before annealing, the Si 3N 4 stress-liners induce a tensile strain (∼0.5%) in Si. After thermal-annealing (> 800°C), the strain becomes highly compressive (> ∼0.4%), because of dehydrogenation-induced structural relaxation in Si 3N 4 films. On the other hand, the tensile strain becomes large (>~0.7%) after UV laser-annealing at 400°C, due to non-equilibrium dehydrogenation in Si 3N 4 films. This strain-enhancement technique is useful for the realization of advanced high-speed three-dimensional transistors.

Original languageEnglish
Pages (from-to)3276-3278
Number of pages3
JournalThin Solid Films
Volume520
Issue number8
DOIs
Publication statusPublished - Feb 1 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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