Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures

Taizoh Sadoh, M. Kurosawa, A. Heya, N. Matsuo, M. Miyao

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Strain-induced enhancement of carrier mobility is essential for achieving high-speed transistors. The effects of thermal-annealing (temperature: 400-1150°C) and ultraviolet (UV) laser-annealing (wavelength: 248 nm, temperature: 30-400°C) on strain-enhancement in Si-pillars covered with Si 3N 4 stress-liners by plasma-enhanced chemical vapor deposition are investigated. Before annealing, the Si 3N 4 stress-liners induce a tensile strain (∼0.5%) in Si. After thermal-annealing (> 800°C), the strain becomes highly compressive (> ∼0.4%), because of dehydrogenation-induced structural relaxation in Si 3N 4 films. On the other hand, the tensile strain becomes large (>~0.7%) after UV laser-annealing at 400°C, due to non-equilibrium dehydrogenation in Si 3N 4 films. This strain-enhancement technique is useful for the realization of advanced high-speed three-dimensional transistors.

Original languageEnglish
Pages (from-to)3276-3278
Number of pages3
JournalThin Solid Films
Volume520
Issue number8
DOIs
Publication statusPublished - Feb 1 2012

Fingerprint

Tensile strain
laser annealing
Modulation
Annealing
linings
dehydrogenation
ultraviolet lasers
modulation
microstructure
Microstructure
annealing
augmentation
transistors
Ultraviolet lasers
high speed
Dehydrogenation
carrier mobility
Transistors
Structural relaxation
vapor deposition

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures. / Sadoh, Taizoh; Kurosawa, M.; Heya, A.; Matsuo, N.; Miyao, M.

In: Thin Solid Films, Vol. 520, No. 8, 01.02.2012, p. 3276-3278.

Research output: Contribution to journalArticle

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AU - Miyao, M.

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