Enhancement of surface decomposition using supersonic beam

Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy

X. Q. Shen, Tanaka Satoru, S. Iwai, Y. Aoyagi

Research output: Contribution to journalConference article

Abstract

The enhancement effect of surface decomposition using supersonic beam was found for the first time, in the fabrication of GaN quantum dots on AlGaN/6H-SiC(0 0 0 1) surfaces by gas-source molecular beam epitaxy. GaN quantum dots were successfully fabricated using Si which was supplied by supersonic beam of CH3SiH3, while the GaN dots could not be formed using usual beam of CH3SiH3. The optical properties of the fabricated GaN quantum dots were investigated by photoluminescence measurements. The advantage by using supersonic beam technique in the enhancement of surface reaction was demonstrated.

Original languageEnglish
Pages (from-to)402-406
Number of pages5
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - Jan 1 1999
Externally publishedYes
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: Aug 31 1998Sep 4 1998

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Gas source molecular beam epitaxy
Semiconductor quantum dots
molecular beam epitaxy
quantum dots
Decomposition
decomposition
augmentation
gases
Surface reactions
Photoluminescence
Optical properties
surface reactions
Fabrication
photoluminescence
optical properties
fabrication
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Enhancement of surface decomposition using supersonic beam : Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy. / Shen, X. Q.; Satoru, Tanaka; Iwai, S.; Aoyagi, Y.

In: Journal of Crystal Growth, Vol. 201, 01.01.1999, p. 402-406.

Research output: Contribution to journalConference article

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