Abstract
The enhancement effect of surface decomposition using supersonic beam was found for the first time, in the fabrication of GaN quantum dots on AlGaN/6H-SiC(0 0 0 1) surfaces by gas-source molecular beam epitaxy. GaN quantum dots were successfully fabricated using Si which was supplied by supersonic beam of CH3SiH3, while the GaN dots could not be formed using usual beam of CH3SiH3. The optical properties of the fabricated GaN quantum dots were investigated by photoluminescence measurements. The advantage by using supersonic beam technique in the enhancement of surface reaction was demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 402-406 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 201 |
| DOIs | |
| Publication status | Published - Jan 1 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes Duration: Aug 31 1998 → Sep 4 1998 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
Enhancement of surface decomposition using supersonic beam : Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy. / Shen, X. Q.; Satoru, Tanaka; Iwai, S.; Aoyagi, Y.
In: Journal of Crystal Growth, Vol. 201, 01.01.1999, p. 402-406.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Enhancement of surface decomposition using supersonic beam
T2 - Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy
AU - Shen, X. Q.
AU - Satoru, Tanaka
AU - Iwai, S.
AU - Aoyagi, Y.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - The enhancement effect of surface decomposition using supersonic beam was found for the first time, in the fabrication of GaN quantum dots on AlGaN/6H-SiC(0 0 0 1) surfaces by gas-source molecular beam epitaxy. GaN quantum dots were successfully fabricated using Si which was supplied by supersonic beam of CH3SiH3, while the GaN dots could not be formed using usual beam of CH3SiH3. The optical properties of the fabricated GaN quantum dots were investigated by photoluminescence measurements. The advantage by using supersonic beam technique in the enhancement of surface reaction was demonstrated.
AB - The enhancement effect of surface decomposition using supersonic beam was found for the first time, in the fabrication of GaN quantum dots on AlGaN/6H-SiC(0 0 0 1) surfaces by gas-source molecular beam epitaxy. GaN quantum dots were successfully fabricated using Si which was supplied by supersonic beam of CH3SiH3, while the GaN dots could not be formed using usual beam of CH3SiH3. The optical properties of the fabricated GaN quantum dots were investigated by photoluminescence measurements. The advantage by using supersonic beam technique in the enhancement of surface reaction was demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=0032680588&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032680588&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(98)01362-1
DO - 10.1016/S0022-0248(98)01362-1
M3 - Conference article
VL - 201
SP - 402
EP - 406
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -