Enhancement of the diffusion of oxygen and boron in silicon crystals under irradiation of infrared laser light

Lijun Liu, Katsutoshi Tanahashi, Hiroshi Yamada-Kaneta, Y. Kangawa, Koichi Kakimoto

Research output: Contribution to journalArticlepeer-review

Abstract

Numerical and experimental analyses revealed the enhancement of diffusion of oxygen and boron by laser irradiation. We studied the effect of laser irradiation on the enhancement of diffusion of boron and oxygen including both isotopes of O16 and O18. The study clarified that the diffusion of the impurities was enhanced by laser irradiation by about 2.5-8 times more than that in the case without laser irradiation in the temperature range from 990 to 1200°C. We confirmed from temperature measurements of the samples that such enhancement was not based on temperature increase caused by laser irradiation but was based on the effect of irradiation of the laser. The effect of frequency of the laser on the diffusion was observed by changing the wavelength of the laser.

Original languageEnglish
Article number073103
JournalJournal of Applied Physics
Volume99
Issue number7
DOIs
Publication statusPublished - Apr 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Enhancement of the diffusion of oxygen and boron in silicon crystals under irradiation of infrared laser light'. Together they form a unique fingerprint.

Cite this