Enhancement of visible-light photocatalysis by coupling with narrow-band-gap semiconductor

A case study on Bi 2S 3/Bi 2WO 6

Zhijie Zhang, Wenzhong Wang, Lu Wang, Songmei Sun

Research output: Contribution to journalArticle

270 Citations (Scopus)

Abstract

To overcome the drawback of low photocatalytic efficiency brought by electron-hole recombination and narrow photoresponse range, we designed a novel Bi 2S 3/Bi 2WO 6 composite photocatalyst. The composite possesses a wide photoabsorption until 800 nm, which occupies nearly the whole range of the visible light. Compared with bare Bi 2WO 6, the Bi 2S 3/Bi 2WO 6 composite exhibits significantly enhanced photocatalytic activity for phenol degradation under visible light irradiation. On the basis of the calculated energy band positions, the mechanism of enhanced photocatalytic activity was proposed. The present study provides a new strategy to design composite materials with enhanced photocatalytic performance.

Original languageEnglish
Pages (from-to)593-597
Number of pages5
JournalACS Applied Materials and Interfaces
Volume4
Issue number2
DOIs
Publication statusPublished - Feb 22 2012
Externally publishedYes

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Photocatalysis
Composite materials
Photocatalysts
Phenol
Band structure
Phenols
Irradiation
Degradation
Narrow band gap semiconductors
Electrons

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Enhancement of visible-light photocatalysis by coupling with narrow-band-gap semiconductor : A case study on Bi 2S 3/Bi 2WO 6. / Zhang, Zhijie; Wang, Wenzhong; Wang, Lu; Sun, Songmei.

In: ACS Applied Materials and Interfaces, Vol. 4, No. 2, 22.02.2012, p. 593-597.

Research output: Contribution to journalArticle

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