TY - JOUR
T1 - Epitaxia growth of a low-density framework form of crystalline silicon
T2 - A molecular-dynamics study
AU - Munetoh, S.
AU - Moriguchi, K.
AU - Kamei, K.
AU - Shintani, A.
AU - Motooka, T.
N1 - Copyright:
Copyright 2007 Elsevier B.V., All rights reserved.
PY - 2001/5/21
Y1 - 2001/5/21
N2 - A route for preparing pristine Si clathrates with epitaxial growth techniques was theoretically studied using molecular-dynamics (MD) simulations. results suggest that new wide-gap Si semiconductors with clathrate structures can be prepared using epitaxial growth techniques.
AB - A route for preparing pristine Si clathrates with epitaxial growth techniques was theoretically studied using molecular-dynamics (MD) simulations. results suggest that new wide-gap Si semiconductors with clathrate structures can be prepared using epitaxial growth techniques.
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U2 - 10.1103/PhysRevLett.86.4879
DO - 10.1103/PhysRevLett.86.4879
M3 - Article
C2 - 11384371
AN - SCOPUS:0035926889
SN - 0031-9007
VL - 86
SP - 4879
EP - 4882
JO - Physical Review Letters
JF - Physical Review Letters
IS - 21
ER -