Epitaxia growth of a low-density framework form of crystalline silicon: A molecular-dynamics study

S. Munetoh, K. Moriguchi, K. Kamei, A. Shintani, T. Motooka

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

A route for preparing pristine Si clathrates with epitaxial growth techniques was theoretically studied using molecular-dynamics (MD) simulations. results suggest that new wide-gap Si semiconductors with clathrate structures can be prepared using epitaxial growth techniques.

Original languageEnglish
Pages (from-to)4879-4882
Number of pages4
JournalPhysical Review Letters
Volume86
Issue number21
DOIs
Publication statusPublished - May 21 2001
Externally publishedYes

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clathrates
molecular dynamics
silicon
routes
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Epitaxia growth of a low-density framework form of crystalline silicon : A molecular-dynamics study. / Munetoh, S.; Moriguchi, K.; Kamei, K.; Shintani, A.; Motooka, T.

In: Physical Review Letters, Vol. 86, No. 21, 21.05.2001, p. 4879-4882.

Research output: Contribution to journalArticle

Munetoh, S. ; Moriguchi, K. ; Kamei, K. ; Shintani, A. ; Motooka, T. / Epitaxia growth of a low-density framework form of crystalline silicon : A molecular-dynamics study. In: Physical Review Letters. 2001 ; Vol. 86, No. 21. pp. 4879-4882.
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