Epitaxia growth of a low-density framework form of crystalline silicon: A molecular-dynamics study

S. Munetoh, K. Moriguchi, K. Kamei, A. Shintani, T. Motooka

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

A route for preparing pristine Si clathrates with epitaxial growth techniques was theoretically studied using molecular-dynamics (MD) simulations. results suggest that new wide-gap Si semiconductors with clathrate structures can be prepared using epitaxial growth techniques.

Original languageEnglish
Pages (from-to)4879-4882
Number of pages4
JournalPhysical review letters
Volume86
Issue number21
DOIs
Publication statusPublished - May 21 2001

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Epitaxia growth of a low-density framework form of crystalline silicon: A molecular-dynamics study'. Together they form a unique fingerprint.

  • Cite this