Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate

Yuki Uchida, Tasuku Iwaizako, Seigi Mizuno, Masaharu Tsuji, Hiroki Ago

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Hexagonal boron nitride (h-BN), an atomically thin insulating material, shows a large band gap, mechanical flexibility, and optical transparency. It can be stacked with other two-dimensional (2D) materials through van der Waals interactions to form layered heterostructures. These properties promise its application as an insulating layer of novel 2D electronic devices due to its atomically smooth surface with a large band gap. Herein, we demonstrated the ambient-pressure chemical vapour deposition (CVD) growth of high-quality, large-area monolayer h-BN on a Cu(111) thin film deposited on a c-plane sapphire using ammonia borane (BH3NH3) as the feedstock. Highly oriented triangular h-BN grains grow on Cu(111), which finally coalescence to cover the entire Cu surface. Low-energy electron diffraction (LEED) measurements indicated that the hexagonal lattice of the monolayer h-BN is well-oriented along the underlying Cu(111) lattice, thus implying the epitaxial growth of h-BN, which can be applied in various 2D electronic devices.

Original languageEnglish
Pages (from-to)8230-8235
Number of pages6
JournalPhysical Chemistry Chemical Physics
Volume19
Issue number12
DOIs
Publication statusPublished - Jan 1 2017

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Aluminum Oxide
boron nitrides
Chemical vapor deposition
Monolayers
sapphire
vapor deposition
Substrates
Energy gap
Boranes
boranes
Low energy electron diffraction
Insulating materials
Coalescence
electronics
Ammonia
Epitaxial growth
Crystal lattices
insulation
Transparency
Feedstocks

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate. / Uchida, Yuki; Iwaizako, Tasuku; Mizuno, Seigi; Tsuji, Masaharu; Ago, Hiroki.

In: Physical Chemistry Chemical Physics, Vol. 19, No. 12, 01.01.2017, p. 8230-8235.

Research output: Contribution to journalArticle

@article{7d30bf7eba63431d852156f30375c00a,
title = "Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate",
abstract = "Hexagonal boron nitride (h-BN), an atomically thin insulating material, shows a large band gap, mechanical flexibility, and optical transparency. It can be stacked with other two-dimensional (2D) materials through van der Waals interactions to form layered heterostructures. These properties promise its application as an insulating layer of novel 2D electronic devices due to its atomically smooth surface with a large band gap. Herein, we demonstrated the ambient-pressure chemical vapour deposition (CVD) growth of high-quality, large-area monolayer h-BN on a Cu(111) thin film deposited on a c-plane sapphire using ammonia borane (BH3NH3) as the feedstock. Highly oriented triangular h-BN grains grow on Cu(111), which finally coalescence to cover the entire Cu surface. Low-energy electron diffraction (LEED) measurements indicated that the hexagonal lattice of the monolayer h-BN is well-oriented along the underlying Cu(111) lattice, thus implying the epitaxial growth of h-BN, which can be applied in various 2D electronic devices.",
author = "Yuki Uchida and Tasuku Iwaizako and Seigi Mizuno and Masaharu Tsuji and Hiroki Ago",
year = "2017",
month = "1",
day = "1",
doi = "10.1039/c6cp08903h",
language = "English",
volume = "19",
pages = "8230--8235",
journal = "Physical Chemistry Chemical Physics",
issn = "1463-9076",
publisher = "Royal Society of Chemistry",
number = "12",

}

TY - JOUR

T1 - Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate

AU - Uchida, Yuki

AU - Iwaizako, Tasuku

AU - Mizuno, Seigi

AU - Tsuji, Masaharu

AU - Ago, Hiroki

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Hexagonal boron nitride (h-BN), an atomically thin insulating material, shows a large band gap, mechanical flexibility, and optical transparency. It can be stacked with other two-dimensional (2D) materials through van der Waals interactions to form layered heterostructures. These properties promise its application as an insulating layer of novel 2D electronic devices due to its atomically smooth surface with a large band gap. Herein, we demonstrated the ambient-pressure chemical vapour deposition (CVD) growth of high-quality, large-area monolayer h-BN on a Cu(111) thin film deposited on a c-plane sapphire using ammonia borane (BH3NH3) as the feedstock. Highly oriented triangular h-BN grains grow on Cu(111), which finally coalescence to cover the entire Cu surface. Low-energy electron diffraction (LEED) measurements indicated that the hexagonal lattice of the monolayer h-BN is well-oriented along the underlying Cu(111) lattice, thus implying the epitaxial growth of h-BN, which can be applied in various 2D electronic devices.

AB - Hexagonal boron nitride (h-BN), an atomically thin insulating material, shows a large band gap, mechanical flexibility, and optical transparency. It can be stacked with other two-dimensional (2D) materials through van der Waals interactions to form layered heterostructures. These properties promise its application as an insulating layer of novel 2D electronic devices due to its atomically smooth surface with a large band gap. Herein, we demonstrated the ambient-pressure chemical vapour deposition (CVD) growth of high-quality, large-area monolayer h-BN on a Cu(111) thin film deposited on a c-plane sapphire using ammonia borane (BH3NH3) as the feedstock. Highly oriented triangular h-BN grains grow on Cu(111), which finally coalescence to cover the entire Cu surface. Low-energy electron diffraction (LEED) measurements indicated that the hexagonal lattice of the monolayer h-BN is well-oriented along the underlying Cu(111) lattice, thus implying the epitaxial growth of h-BN, which can be applied in various 2D electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=85019109890&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85019109890&partnerID=8YFLogxK

U2 - 10.1039/c6cp08903h

DO - 10.1039/c6cp08903h

M3 - Article

VL - 19

SP - 8230

EP - 8235

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

SN - 1463-9076

IS - 12

ER -