TY - JOUR
T1 - Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate
AU - Uchida, Yuki
AU - Iwaizako, Tasuku
AU - Mizuno, Seigi
AU - Tsuji, Masaharu
AU - Ago, Hiroki
N1 - Funding Information:
This work was supported by the PRESTO-JST and JSPS KAKENHI Grant Number JP15H03530, JP15K13304, JP16H0091, JP15H03677 and JP15K13504. Y. U. acknowledges the receipt of scholarship from Advanced Graduate Program in Global Strategy for Green Asia. We thank Dr Solís-Fernández and Dr Miura for valuable suggestions and help of the XPS measurements, respectively.
Publisher Copyright:
© the Owner Societies 2017.
PY - 2017
Y1 - 2017
N2 - Hexagonal boron nitride (h-BN), an atomically thin insulating material, shows a large band gap, mechanical flexibility, and optical transparency. It can be stacked with other two-dimensional (2D) materials through van der Waals interactions to form layered heterostructures. These properties promise its application as an insulating layer of novel 2D electronic devices due to its atomically smooth surface with a large band gap. Herein, we demonstrated the ambient-pressure chemical vapour deposition (CVD) growth of high-quality, large-area monolayer h-BN on a Cu(111) thin film deposited on a c-plane sapphire using ammonia borane (BH3NH3) as the feedstock. Highly oriented triangular h-BN grains grow on Cu(111), which finally coalescence to cover the entire Cu surface. Low-energy electron diffraction (LEED) measurements indicated that the hexagonal lattice of the monolayer h-BN is well-oriented along the underlying Cu(111) lattice, thus implying the epitaxial growth of h-BN, which can be applied in various 2D electronic devices.
AB - Hexagonal boron nitride (h-BN), an atomically thin insulating material, shows a large band gap, mechanical flexibility, and optical transparency. It can be stacked with other two-dimensional (2D) materials through van der Waals interactions to form layered heterostructures. These properties promise its application as an insulating layer of novel 2D electronic devices due to its atomically smooth surface with a large band gap. Herein, we demonstrated the ambient-pressure chemical vapour deposition (CVD) growth of high-quality, large-area monolayer h-BN on a Cu(111) thin film deposited on a c-plane sapphire using ammonia borane (BH3NH3) as the feedstock. Highly oriented triangular h-BN grains grow on Cu(111), which finally coalescence to cover the entire Cu surface. Low-energy electron diffraction (LEED) measurements indicated that the hexagonal lattice of the monolayer h-BN is well-oriented along the underlying Cu(111) lattice, thus implying the epitaxial growth of h-BN, which can be applied in various 2D electronic devices.
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U2 - 10.1039/c6cp08903h
DO - 10.1039/c6cp08903h
M3 - Article
C2 - 28272611
AN - SCOPUS:85019109890
VL - 19
SP - 8230
EP - 8235
JO - Physical Chemistry Chemical Physics
JF - Physical Chemistry Chemical Physics
SN - 1463-9076
IS - 12
ER -