Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures

Hiroki Ago, Yui Ogawa, Kenji Kawahara, Yoshito Ito, Baoshan Hu, Carlo M. Orofeo, Pablo Soils Fernandez, Hiroko Endo, Hiroki Hibino, Seigi Mizuno, Kazuhito Tsukagoshi, Masaharu Tsuji

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We demonstrate a novel epitaxial CVD method to grow high quality single-layer graphene using a thin Cu(111) film instead of conventional Cu foil. The atomically smooth Cu(111) catalyst produced the graphene with less defects and controlled orientation of the hexagonal lattice. The CVD graphene showed the carrier mobility as high as 20,000 cm2/Vs at room temperature. Using the uniform graphene sheet, densely aligned graphene nanoribbons were produced by a metal-assisted etching technique, resulting a high on/off ratio of 5,000. In addition, the epitaxial CVD method was applied to grow uniform double-layer graphene with more than 90% coverage. These GNRs and double-layer graphene are expected as promising candidates for semiconductor devices. Furthermore, heterostructures of MoS2 and graphene were developed, and unique photo-responsive devices were observed.

    Original languageEnglish
    Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages27.2.1-27.2.4
    Volume2016-February
    ISBN (Electronic)9781467398930
    DOIs
    Publication statusPublished - Feb 16 2015
    Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
    Duration: Dec 7 2015Dec 9 2015

    Other

    Other61st IEEE International Electron Devices Meeting, IEDM 2015
    CountryUnited States
    CityWashington
    Period12/7/1512/9/15

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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  • Cite this

    Ago, H., Ogawa, Y., Kawahara, K., Ito, Y., Hu, B., Orofeo, C. M., Fernandez, P. S., Endo, H., Hibino, H., Mizuno, S., Tsukagoshi, K., & Tsuji, M. (2015). Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (Vol. 2016-February, pp. 27.2.1-27.2.4). [7409779] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409779