Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures

Hiroki Ago; Yui Ogawa; Kenji Kawahara; Yoshito Ito; Baoshan Hu; Carlo M. Orofeo; Pablo Soils Fernandez; Hiroko Endo; Hiroki Hibino; Seigi Mizuno; Kazuhito Tsukagoshi; Masaharu Tsuji

doi:10.1109/IEDM.2015.7409779

Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures

Hiroki Ago, Yui Ogawa, Kenji Kawahara, Yoshito Ito, Baoshan Hu, Carlo M. Orofeo, Pablo Soils Fernandez, Hiroko Endo, Hiroki Hibino, Seigi Mizuno, Kazuhito Tsukagoshi, Masaharu Tsuji

Advanced Project Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate a novel epitaxial CVD method to grow high quality single-layer graphene using a thin Cu(111) film instead of conventional Cu foil. The atomically smooth Cu(111) catalyst produced the graphene with less defects and controlled orientation of the hexagonal lattice. The CVD graphene showed the carrier mobility as high as 20,000 cm2/Vs at room temperature. Using the uniform graphene sheet, densely aligned graphene nanoribbons were produced by a metal-assisted etching technique, resulting a high on/off ratio of 5,000. In addition, the epitaxial CVD method was applied to grow uniform double-layer graphene with more than 90% coverage. These GNRs and double-layer graphene are expected as promising candidates for semiconductor devices. Furthermore, heterostructures of MoS2 and graphene were developed, and unique photo-responsive devices were observed.

Original language	English
Title of host publication	2015 IEEE International Electron Devices Meeting, IEDM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	27.2.1-27.2.4
ISBN (Electronic)	9781467398930
DOIs	https://doi.org/10.1109/IEDM.2015.7409779
Publication status	Published - Feb 16 2015
Event	61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States Duration: Dec 7 2015 → Dec 9 2015

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2016-February
ISSN (Print)	0163-1918

Other

Other	61st IEEE International Electron Devices Meeting, IEDM 2015
Country/Territory	United States
City	Washington
Period	12/7/15 → 12/9/15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2015.7409779

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Ago, H., Ogawa, Y., Kawahara, K., Ito, Y., Hu, B., Orofeo, C. M., Fernandez, P. S., Endo, H., Hibino, H., Mizuno, S., Tsukagoshi, K., & Tsuji, M. (2015). Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 27.2.1-27.2.4). [7409779] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409779

Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures. / Ago, Hiroki; Ogawa, Yui; Kawahara, Kenji et al.
2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 27.2.1-27.2.4 7409779 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ago, H, Ogawa, Y, Kawahara, K, Ito, Y, Hu, B, Orofeo, CM, Fernandez, PS, Endo, H, Hibino, H, Mizuno, S, Tsukagoshi, K & Tsuji, M 2015, Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures. in 2015 IEEE International Electron Devices Meeting, IEDM 2015., 7409779, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 27.2.1-27.2.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 12/7/15. https://doi.org/10.1109/IEDM.2015.7409779

Ago H, Ogawa Y, Kawahara K, Ito Y, Hu B, Orofeo CM et al. Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures. In 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 27.2.1-27.2.4. 7409779. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2015.7409779

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title = "Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures",

abstract = "We demonstrate a novel epitaxial CVD method to grow high quality single-layer graphene using a thin Cu(111) film instead of conventional Cu foil. The atomically smooth Cu(111) catalyst produced the graphene with less defects and controlled orientation of the hexagonal lattice. The CVD graphene showed the carrier mobility as high as 20,000 cm2/Vs at room temperature. Using the uniform graphene sheet, densely aligned graphene nanoribbons were produced by a metal-assisted etching technique, resulting a high on/off ratio of 5,000. In addition, the epitaxial CVD method was applied to grow uniform double-layer graphene with more than 90% coverage. These GNRs and double-layer graphene are expected as promising candidates for semiconductor devices. Furthermore, heterostructures of MoS2 and graphene were developed, and unique photo-responsive devices were observed.",

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AU - Ago, Hiroki

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AU - Ito, Yoshito

AU - Hu, Baoshan

AU - Orofeo, Carlo M.

AU - Fernandez, Pablo Soils

AU - Endo, Hiroko

AU - Hibino, Hiroki

AU - Mizuno, Seigi

AU - Tsukagoshi, Kazuhito

AU - Tsuji, Masaharu

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N2 - We demonstrate a novel epitaxial CVD method to grow high quality single-layer graphene using a thin Cu(111) film instead of conventional Cu foil. The atomically smooth Cu(111) catalyst produced the graphene with less defects and controlled orientation of the hexagonal lattice. The CVD graphene showed the carrier mobility as high as 20,000 cm2/Vs at room temperature. Using the uniform graphene sheet, densely aligned graphene nanoribbons were produced by a metal-assisted etching technique, resulting a high on/off ratio of 5,000. In addition, the epitaxial CVD method was applied to grow uniform double-layer graphene with more than 90% coverage. These GNRs and double-layer graphene are expected as promising candidates for semiconductor devices. Furthermore, heterostructures of MoS2 and graphene were developed, and unique photo-responsive devices were observed.

AB - We demonstrate a novel epitaxial CVD method to grow high quality single-layer graphene using a thin Cu(111) film instead of conventional Cu foil. The atomically smooth Cu(111) catalyst produced the graphene with less defects and controlled orientation of the hexagonal lattice. The CVD graphene showed the carrier mobility as high as 20,000 cm2/Vs at room temperature. Using the uniform graphene sheet, densely aligned graphene nanoribbons were produced by a metal-assisted etching technique, resulting a high on/off ratio of 5,000. In addition, the epitaxial CVD method was applied to grow uniform double-layer graphene with more than 90% coverage. These GNRs and double-layer graphene are expected as promising candidates for semiconductor devices. Furthermore, heterostructures of MoS2 and graphene were developed, and unique photo-responsive devices were observed.

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Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures

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