Epitaxial ferromagnetic Fe3Si/Si(111) structures with high-quality heterointerfaces

K. Hamaya, K. Ueda, Y. Kishi, Y. Ando, T. Sadoh, M. Miyao

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Abstract

To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe3 Si /silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 °C, we realize the epitaxial growth of ferromagnetic Fe3 Si layers on Si(111) with an abrupt interface, and the grown Fe3 Si layer has the ordered D O3 phase. Measurements of magnetic and electrical properties for the Fe3 SiSi (111) yield a magnetic moment of ∼3.16 μB f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of ∼1.08, respectively.

Original languageEnglish
Article number132117
JournalApplied Physics Letters
Volume93
Issue number13
DOIs
Publication statusPublished - Oct 14 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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