TY - JOUR
T1 - Epitaxial growth and electronic properties of large hexagonal graphene domains on Cu(111) thin film
AU - Ago, Hiroki
AU - Kawahara, Kenji
AU - Ogawa, Yui
AU - Tanoue, Shota
AU - Bissett, Mark A.
AU - Tsuji, Masaharu
AU - Sakaguchi, Hidetsugu
AU - Koch, Roland J.
AU - Fromm, Felix
AU - Seyller, Thomas
AU - Komatsu, Katsuyoshi
AU - Tsukagoshi, Kazuhito
PY - 2013/7
Y1 - 2013/7
N2 - Large hexagonal single-crystalline domains of single-layer graphene are epitaxially grown by ambient-pressure chemical vapor deposition over a thin Cu(111) film deposited on c-plane sapphire. The hexagonal graphene domains with a maximum size of 100 m are oriented in the same direction due to the epitaxial growth. Reflecting high crystallinity, a clear band structure with the Dirac cone is observed by angle-resolved photoelectron spectroscopy (ARPES), and a high carrier mobility exceeding 4,000 cm2 V-1 s-1 is obtained on SiO 2/Si at room temperature. Our epitaxial approach combined with large domain growth is expected to contribute to future electronic applications.
AB - Large hexagonal single-crystalline domains of single-layer graphene are epitaxially grown by ambient-pressure chemical vapor deposition over a thin Cu(111) film deposited on c-plane sapphire. The hexagonal graphene domains with a maximum size of 100 m are oriented in the same direction due to the epitaxial growth. Reflecting high crystallinity, a clear band structure with the Dirac cone is observed by angle-resolved photoelectron spectroscopy (ARPES), and a high carrier mobility exceeding 4,000 cm2 V-1 s-1 is obtained on SiO 2/Si at room temperature. Our epitaxial approach combined with large domain growth is expected to contribute to future electronic applications.
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U2 - 10.7567/APEX.6.075101
DO - 10.7567/APEX.6.075101
M3 - Article
AN - SCOPUS:84880766839
VL - 6
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 7
M1 - 075101
ER -