Abstract
Large hexagonal single-crystalline domains of single-layer graphene are epitaxially grown by ambient-pressure chemical vapor deposition over a thin Cu(111) film deposited on c-plane sapphire. The hexagonal graphene domains with a maximum size of 100 m are oriented in the same direction due to the epitaxial growth. Reflecting high crystallinity, a clear band structure with the Dirac cone is observed by angle-resolved photoelectron spectroscopy (ARPES), and a high carrier mobility exceeding 4,000 cm2 V-1 s-1 is obtained on SiO 2/Si at room temperature. Our epitaxial approach combined with large domain growth is expected to contribute to future electronic applications.
| Original language | English |
|---|---|
| Article number | 075101 |
| Journal | Applied Physics Express |
| Volume | 6 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jul 1 2013 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Epitaxial growth and electronic properties of large hexagonal graphene domains on Cu(111) thin film. / Ago, Hiroki; Kawahara, Kenji; Ogawa, Yui; Tanoue, Shota; Bissett, Mark A.; Tsuji, Masaharu; Sakaguchi, Hidetsugu; Koch, Roland J.; Fromm, Felix; Seyller, Thomas; Komatsu, Katsuyoshi; Tsukagoshi, Kazuhito.
In: Applied Physics Express, Vol. 6, No. 7, 075101, 01.07.2013.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Epitaxial growth and electronic properties of large hexagonal graphene domains on Cu(111) thin film
AU - Ago, Hiroki
AU - Kawahara, Kenji
AU - Ogawa, Yui
AU - Tanoue, Shota
AU - Bissett, Mark A.
AU - Tsuji, Masaharu
AU - Sakaguchi, Hidetsugu
AU - Koch, Roland J.
AU - Fromm, Felix
AU - Seyller, Thomas
AU - Komatsu, Katsuyoshi
AU - Tsukagoshi, Kazuhito
PY - 2013/7/1
Y1 - 2013/7/1
N2 - Large hexagonal single-crystalline domains of single-layer graphene are epitaxially grown by ambient-pressure chemical vapor deposition over a thin Cu(111) film deposited on c-plane sapphire. The hexagonal graphene domains with a maximum size of 100 m are oriented in the same direction due to the epitaxial growth. Reflecting high crystallinity, a clear band structure with the Dirac cone is observed by angle-resolved photoelectron spectroscopy (ARPES), and a high carrier mobility exceeding 4,000 cm2 V-1 s-1 is obtained on SiO 2/Si at room temperature. Our epitaxial approach combined with large domain growth is expected to contribute to future electronic applications.
AB - Large hexagonal single-crystalline domains of single-layer graphene are epitaxially grown by ambient-pressure chemical vapor deposition over a thin Cu(111) film deposited on c-plane sapphire. The hexagonal graphene domains with a maximum size of 100 m are oriented in the same direction due to the epitaxial growth. Reflecting high crystallinity, a clear band structure with the Dirac cone is observed by angle-resolved photoelectron spectroscopy (ARPES), and a high carrier mobility exceeding 4,000 cm2 V-1 s-1 is obtained on SiO 2/Si at room temperature. Our epitaxial approach combined with large domain growth is expected to contribute to future electronic applications.
UR - http://www.scopus.com/inward/record.url?scp=84880766839&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84880766839&partnerID=8YFLogxK
U2 - 10.7567/APEX.6.075101
DO - 10.7567/APEX.6.075101
M3 - Article
VL - 6
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 7
M1 - 075101
ER -