Epitaxial growth and electronic properties of large hexagonal graphene domains on Cu(111) thin film

Hiroki Ago, Kenji Kawahara, Yui Ogawa, Shota Tanoue, Mark A. Bissett, Masaharu Tsuji, Hidetsugu Sakaguchi, Roland J. Koch, Felix Fromm, Thomas Seyller, Katsuyoshi Komatsu, Kazuhito Tsukagoshi

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    Abstract

    Large hexagonal single-crystalline domains of single-layer graphene are epitaxially grown by ambient-pressure chemical vapor deposition over a thin Cu(111) film deposited on c-plane sapphire. The hexagonal graphene domains with a maximum size of 100 m are oriented in the same direction due to the epitaxial growth. Reflecting high crystallinity, a clear band structure with the Dirac cone is observed by angle-resolved photoelectron spectroscopy (ARPES), and a high carrier mobility exceeding 4,000 cm2 V-1 s-1 is obtained on SiO 2/Si at room temperature. Our epitaxial approach combined with large domain growth is expected to contribute to future electronic applications.

    Original languageEnglish
    Article number075101
    JournalApplied Physics Express
    Volume6
    Issue number7
    DOIs
    Publication statusPublished - Jul 1 2013

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    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Ago, H., Kawahara, K., Ogawa, Y., Tanoue, S., Bissett, M. A., Tsuji, M., ... Tsukagoshi, K. (2013). Epitaxial growth and electronic properties of large hexagonal graphene domains on Cu(111) thin film. Applied Physics Express, 6(7), [075101]. https://doi.org/10.7567/APEX.6.075101