Abstract
Bi4Ti3O12 films were epitaxially grown at 600-750°C on various types of single-crystal oxide substrate by metal-organic chemical vapor deposition. In terms of the oxygen interatomic distances of the substrates used, the crystal orientations of the deposited epitaxial films were classified into three groups: (118), in-plane c-axis, and (001) orientations. The films on substrates with an oblong in-plane oxygen unit, had a (100)/(010) and/or (118) orientation, wheras those on substrates with a square in-plane oxygen unit had (001) or (hk0)/(kh0) orientation. There was an intermediate region between the (100)/(010) and (118) orientations at the present deposition temperature, where both orientations coexisted. As a result, the relationship between in-plane oxygen interatomic distances of the substrates and film orientation was summarized into an epitaxial growth map. This map is applicable to the epitaxial growth of other bismuth-layer-structured ferroelectric thin films.
Original language | English |
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Pages (from-to) | 1337-1343 |
Number of pages | 7 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 44 |
Issue number | 3 |
DOIs | |
Publication status | Published - Mar 1 2005 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)