Epitaxial growth map for Bi4Ti3O12 films: A determining factor for crystal orientation

Takayuki Watanabe, Hiroshi Funakubo

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Bi4Ti3O12 films were epitaxially grown at 600-750°C on various types of single-crystal oxide substrate by metal-organic chemical vapor deposition. In terms of the oxygen interatomic distances of the substrates used, the crystal orientations of the deposited epitaxial films were classified into three groups: (118), in-plane c-axis, and (001) orientations. The films on substrates with an oblong in-plane oxygen unit, had a (100)/(010) and/or (118) orientation, wheras those on substrates with a square in-plane oxygen unit had (001) or (hk0)/(kh0) orientation. There was an intermediate region between the (100)/(010) and (118) orientations at the present deposition temperature, where both orientations coexisted. As a result, the relationship between in-plane oxygen interatomic distances of the substrates and film orientation was summarized into an epitaxial growth map. This map is applicable to the epitaxial growth of other bismuth-layer-structured ferroelectric thin films.

Original languageEnglish
Pages (from-to)1337-1343
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number3
Publication statusPublished - Mar 1 2005

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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