Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate

Kensuke Akiyama, Hiroshi Funakubo, Masaru Itakura

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1 Citation (Scopus)

Abstract

High-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2 040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.

Original languageEnglish
Pages (from-to)189-194
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume1493
DOIs
Publication statusPublished - 2013
Event2012 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 25 2012Nov 30 2012

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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