Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate

Kensuke Akiyama; Hiroshi Funakubo; Masaru Itakura

doi:10.1557/opl.2013.407

Epitaxial growth of (010)-oriented β-FeSi₂ film on Si(110) substrate

Kensuke Akiyama, Hiroshi Funakubo, Masaru Itakura

Materials Physics and Engineering

Research output: Contribution to journal › Conference article › peer-review

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Abstract

High-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2 040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.

Original language	English
Pages (from-to)	189-194
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	1493
DOIs	https://doi.org/10.1557/opl.2013.407
Publication status	Published - 2013
Event	2012 MRS Fall Meeting - Boston, MA, United States Duration: Nov 25 2012 → Nov 30 2012

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate",

abstract = "High-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2 040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.",

author = "Kensuke Akiyama and Hiroshi Funakubo and Masaru Itakura",

year = "2013",

doi = "10.1557/opl.2013.407",

language = "English",

volume = "1493",

pages = "189--194",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2012 MRS Fall Meeting ; Conference date: 25-11-2012 Through 30-11-2012",

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T1 - Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate

AU - Akiyama, Kensuke

AU - Funakubo, Hiroshi

AU - Itakura, Masaru

PY - 2013

Y1 - 2013

N2 - High-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2 040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.

AB - High-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2 040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.

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DO - 10.1557/opl.2013.407

M3 - Conference article

AN - SCOPUS:84887591223

VL - 1493

SP - 189

EP - 194

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - 2012 MRS Fall Meeting

Y2 - 25 November 2012 through 30 November 2012

ER -

Epitaxial growth of (010)-oriented β-FeSi₂ film on Si(110) substrate

Abstract

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