Abstract
High-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2 040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.
Original language | English |
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Pages (from-to) | 189-194 |
Number of pages | 6 |
Journal | Materials Research Society Symposium Proceedings |
Volume | 1493 |
DOIs | |
Publication status | Published - 2013 |
Event | 2012 MRS Fall Meeting - Boston, MA, United States Duration: Nov 25 2012 → Nov 30 2012 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering