Abstract
Heteroepitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8 with various mixture ratios has been investigated. The heteroepitaxy is achieved at the substrate temperature of 900°C without any carbonization process. The films grown by pure Si(CH3)4 contain inverse pyramidal pits surrounded by the {111} planes of Si, while {311} faceted pits are formed by mixing Si(CH3)4 with a small amount of Si3H8. When the Si3H8/Si(CH3)4 ratio further increases, pit formation is suppressed and instead Si islands are epitaxially grown from the pit region.
Original language | English |
---|---|
Pages (from-to) | 763-765 |
Number of pages | 3 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 16 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1998 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films