Epitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8

Yoshifumi Ikoma, T. Endo, F. Watanabe, T. Motooka

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    21 Citations (Scopus)

    Abstract

    Heteroepitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8 with various mixture ratios has been investigated. The heteroepitaxy is achieved at the substrate temperature of 900°C without any carbonization process. The films grown by pure Si(CH3)4 contain inverse pyramidal pits surrounded by the {111} planes of Si, while {311} faceted pits are formed by mixing Si(CH3)4 with a small amount of Si3H8. When the Si3H8/Si(CH3)4 ratio further increases, pit formation is suppressed and instead Si islands are epitaxially grown from the pit region.

    Original languageEnglish
    Pages (from-to)763-765
    Number of pages3
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume16
    Issue number2
    DOIs
    Publication statusPublished - 1998

    All Science Journal Classification (ASJC) codes

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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