Epitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8

Yoshifumi Ikoma; T. Endo; F. Watanabe; T. Motooka

doi:10.1116/1.581056

Epitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH₃)₄ and Si₃H₈

Yoshifumi Ikoma, T. Endo, F. Watanabe, T. Motooka

Advanced Materials Physics

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Heteroepitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH₃)₄ and Si₃H₈ with various mixture ratios has been investigated. The heteroepitaxy is achieved at the substrate temperature of 900°C without any carbonization process. The films grown by pure Si(CH₃)₄ contain inverse pyramidal pits surrounded by the {111} planes of Si, while {311} faceted pits are formed by mixing Si(CH₃)₄ with a small amount of Si₃H₈. When the Si₃H₈/Si(CH₃)₄ ratio further increases, pit formation is suppressed and instead Si islands are epitaxially grown from the pit region.

Original language	English
Pages (from-to)	763-765
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	16
Issue number	2
DOIs	https://doi.org/10.1116/1.581056
Publication status	Published - 1998

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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T1 - Epitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8

AU - Ikoma, Yoshifumi

AU - Endo, T.

AU - Watanabe, F.

AU - Motooka, T.

PY - 1998

Y1 - 1998

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AB - Heteroepitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8 with various mixture ratios has been investigated. The heteroepitaxy is achieved at the substrate temperature of 900°C without any carbonization process. The films grown by pure Si(CH3)4 contain inverse pyramidal pits surrounded by the {111} planes of Si, while {311} faceted pits are formed by mixing Si(CH3)4 with a small amount of Si3H8. When the Si3H8/Si(CH3)4 ratio further increases, pit formation is suppressed and instead Si islands are epitaxially grown from the pit region.

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