Epitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8

Yoshifumi Ikoma, T. Endo, F. Watanabe, T. Motooka

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Heteroepitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8 with various mixture ratios has been investigated. The heteroepitaxy is achieved at the substrate temperature of 900°C without any carbonization process. The films grown by pure Si(CH3)4 contain inverse pyramidal pits surrounded by the {111} planes of Si, while {311} faceted pits are formed by mixing Si(CH3)4 with a small amount of Si3H8. When the Si3H8/Si(CH3)4 ratio further increases, pit formation is suppressed and instead Si islands are epitaxially grown from the pit region.

Original languageEnglish
Pages (from-to)763-765
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume16
Issue number2
DOIs
Publication statusPublished - 1998

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free jets
Epitaxial growth
Carbonization
carbonization
Substrates
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Epitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8 . / Ikoma, Yoshifumi; Endo, T.; Watanabe, F.; Motooka, T.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 16, No. 2, 1998, p. 763-765.

Research output: Contribution to journalArticle

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