Abstract
Heteroepitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8 with various mixture ratios has been investigated. The heteroepitaxy is achieved at the substrate temperature of 900°C without any carbonization process. The films grown by pure Si(CH3)4 contain inverse pyramidal pits surrounded by the {111} planes of Si, while {311} faceted pits are formed by mixing Si(CH3)4 with a small amount of Si3H8. When the Si3H8/Si(CH3)4 ratio further increases, pit formation is suppressed and instead Si islands are epitaxially grown from the pit region.
| Original language | English |
|---|---|
| Pages (from-to) | 763-765 |
| Number of pages | 3 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 16 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1998 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
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Epitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8 . / Ikoma, Yoshifumi; Endo, T.; Watanabe, F.; Motooka, T.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 16, No. 2, 1998, p. 763-765.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Epitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8
AU - Ikoma, Yoshifumi
AU - Endo, T.
AU - Watanabe, F.
AU - Motooka, T.
PY - 1998
Y1 - 1998
N2 - Heteroepitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8 with various mixture ratios has been investigated. The heteroepitaxy is achieved at the substrate temperature of 900°C without any carbonization process. The films grown by pure Si(CH3)4 contain inverse pyramidal pits surrounded by the {111} planes of Si, while {311} faceted pits are formed by mixing Si(CH3)4 with a small amount of Si3H8. When the Si3H8/Si(CH3)4 ratio further increases, pit formation is suppressed and instead Si islands are epitaxially grown from the pit region.
AB - Heteroepitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8 with various mixture ratios has been investigated. The heteroepitaxy is achieved at the substrate temperature of 900°C without any carbonization process. The films grown by pure Si(CH3)4 contain inverse pyramidal pits surrounded by the {111} planes of Si, while {311} faceted pits are formed by mixing Si(CH3)4 with a small amount of Si3H8. When the Si3H8/Si(CH3)4 ratio further increases, pit formation is suppressed and instead Si islands are epitaxially grown from the pit region.
UR - http://www.scopus.com/inward/record.url?scp=0032393923&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032393923&partnerID=8YFLogxK
U2 - 10.1116/1.581056
DO - 10.1116/1.581056
M3 - Article
AN - SCOPUS:0032393923
VL - 16
SP - 763
EP - 765
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 2
ER -