Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

Peipei Zhu, Meijun Yang, Qingfang Xu, Qingyun Sun, Rong Tu, Jun Li, Song Zhang, Qizhong Li, Lianmeng Zhang, Takashi Goto, Ji Shi, Haiwen Li, Hitoshi Ohmori, Marina Kosinova, Bikramjit Basu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Epitaxial 3C–SiC films have been deposited on Si(111) and Si(001) substrates via laser CVD with deposition rate of 12.32 and 15.56 μm/h, respectively. The activation energy of 3C–SiC on Si(111) and Si(001) was 80 and 160 kJ/mol, and the root mean square (RMS) roughness (w) as a function of the film thickness (h) follows power laws of w~h0.31 and w~h0.06, respectively. The growth mechanisms of epitaxial 3C–SiC films on Si(111) and Si(001) was investigated based on the structural analysis and roughness evolution.

Original languageEnglish
Pages (from-to)3850-3856
Number of pages7
JournalJournal of the American Ceramic Society
Volume101
Issue number9
DOIs
Publication statusPublished - Sep 1 2018

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Epitaxial films
Epitaxial growth
Chemical vapor deposition
Surface roughness
Lasers
Deposition rates
Structural analysis
Film thickness
Activation energy
Substrates

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Zhu, P., Yang, M., Xu, Q., Sun, Q., Tu, R., Li, J., ... Basu, B. (2018). Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD. Journal of the American Ceramic Society, 101(9), 3850-3856. https://doi.org/10.1111/jace.15557

Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD. / Zhu, Peipei; Yang, Meijun; Xu, Qingfang; Sun, Qingyun; Tu, Rong; Li, Jun; Zhang, Song; Li, Qizhong; Zhang, Lianmeng; Goto, Takashi; Shi, Ji; Li, Haiwen; Ohmori, Hitoshi; Kosinova, Marina; Basu, Bikramjit.

In: Journal of the American Ceramic Society, Vol. 101, No. 9, 01.09.2018, p. 3850-3856.

Research output: Contribution to journalArticle

Zhu, P, Yang, M, Xu, Q, Sun, Q, Tu, R, Li, J, Zhang, S, Li, Q, Zhang, L, Goto, T, Shi, J, Li, H, Ohmori, H, Kosinova, M & Basu, B 2018, 'Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD', Journal of the American Ceramic Society, vol. 101, no. 9, pp. 3850-3856. https://doi.org/10.1111/jace.15557
Zhu, Peipei ; Yang, Meijun ; Xu, Qingfang ; Sun, Qingyun ; Tu, Rong ; Li, Jun ; Zhang, Song ; Li, Qizhong ; Zhang, Lianmeng ; Goto, Takashi ; Shi, Ji ; Li, Haiwen ; Ohmori, Hitoshi ; Kosinova, Marina ; Basu, Bikramjit. / Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD. In: Journal of the American Ceramic Society. 2018 ; Vol. 101, No. 9. pp. 3850-3856.
@article{0e225ebd683a46878d39abdfa8bfd383,
title = "Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD",
abstract = "Epitaxial 3C–SiC films have been deposited on Si(111) and Si(001) substrates via laser CVD with deposition rate of 12.32 and 15.56 μm/h, respectively. The activation energy of 3C–SiC on Si(111) and Si(001) was 80 and 160 kJ/mol, and the root mean square (RMS) roughness (w) as a function of the film thickness (h) follows power laws of w~h0.31 and w~h0.06, respectively. The growth mechanisms of epitaxial 3C–SiC films on Si(111) and Si(001) was investigated based on the structural analysis and roughness evolution.",
author = "Peipei Zhu and Meijun Yang and Qingfang Xu and Qingyun Sun and Rong Tu and Jun Li and Song Zhang and Qizhong Li and Lianmeng Zhang and Takashi Goto and Ji Shi and Haiwen Li and Hitoshi Ohmori and Marina Kosinova and Bikramjit Basu",
year = "2018",
month = "9",
day = "1",
doi = "10.1111/jace.15557",
language = "English",
volume = "101",
pages = "3850--3856",
journal = "Journal of the American Ceramic Society",
issn = "0002-7820",
publisher = "Wiley-Blackwell",
number = "9",

}

TY - JOUR

T1 - Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

AU - Zhu, Peipei

AU - Yang, Meijun

AU - Xu, Qingfang

AU - Sun, Qingyun

AU - Tu, Rong

AU - Li, Jun

AU - Zhang, Song

AU - Li, Qizhong

AU - Zhang, Lianmeng

AU - Goto, Takashi

AU - Shi, Ji

AU - Li, Haiwen

AU - Ohmori, Hitoshi

AU - Kosinova, Marina

AU - Basu, Bikramjit

PY - 2018/9/1

Y1 - 2018/9/1

N2 - Epitaxial 3C–SiC films have been deposited on Si(111) and Si(001) substrates via laser CVD with deposition rate of 12.32 and 15.56 μm/h, respectively. The activation energy of 3C–SiC on Si(111) and Si(001) was 80 and 160 kJ/mol, and the root mean square (RMS) roughness (w) as a function of the film thickness (h) follows power laws of w~h0.31 and w~h0.06, respectively. The growth mechanisms of epitaxial 3C–SiC films on Si(111) and Si(001) was investigated based on the structural analysis and roughness evolution.

AB - Epitaxial 3C–SiC films have been deposited on Si(111) and Si(001) substrates via laser CVD with deposition rate of 12.32 and 15.56 μm/h, respectively. The activation energy of 3C–SiC on Si(111) and Si(001) was 80 and 160 kJ/mol, and the root mean square (RMS) roughness (w) as a function of the film thickness (h) follows power laws of w~h0.31 and w~h0.06, respectively. The growth mechanisms of epitaxial 3C–SiC films on Si(111) and Si(001) was investigated based on the structural analysis and roughness evolution.

UR - http://www.scopus.com/inward/record.url?scp=85045741345&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85045741345&partnerID=8YFLogxK

U2 - 10.1111/jace.15557

DO - 10.1111/jace.15557

M3 - Article

VL - 101

SP - 3850

EP - 3856

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

SN - 0002-7820

IS - 9

ER -