Epitaxial growth of a full-Heusler alloy Co2FeSi on silicon by low-temperature molecular beam epitaxy

S. Yamada, K. Yamamoto, K. Ueda, Y. Ando, K. Hamaya, Taizoh Sadoh, M. Miyao

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi on silicon substrates using low-temperature molecular beam epitaxy (LT-MBE). Although in-situ reflection high energy electron diffraction images clearly show two-dimensional epitaxial growth for growth temperatures (TG) of 60, 130, and 200 °C, cross-sectional transmission electron microscopy experiments reveal that there are single-crystal phases other than Heusler alloys near the interface between Co2FeSi and Si for TG = 130 and 200 °C. On the other hand, almost perfect heterointerfaces are achieved for TG = 60 °C. These results and magnetic measurements indicate that highly epitaxial growth of Co2FeSi thin films on Si is demonstrated only for TG = 60 °C.

Original languageEnglish
JournalThin Solid Films
Volume518
Issue number6 SUPPL. 1
DOIs
Publication statusPublished - Jan 1 2010

Fingerprint

Silicon
Epitaxial growth
Molecular beam epitaxy
molecular beam epitaxy
silicon
Reflection high energy electron diffraction
Magnetic variables measurement
Growth temperature
Temperature
Single crystals
high energy electrons
Transmission electron microscopy
magnetic measurement
Thin films
electron diffraction
Electrons
Substrates
injection
transmission electron microscopy
single crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Epitaxial growth of a full-Heusler alloy Co2FeSi on silicon by low-temperature molecular beam epitaxy. / Yamada, S.; Yamamoto, K.; Ueda, K.; Ando, Y.; Hamaya, K.; Sadoh, Taizoh; Miyao, M.

In: Thin Solid Films, Vol. 518, No. 6 SUPPL. 1, 01.01.2010.

Research output: Contribution to journalArticle

Yamada, S. ; Yamamoto, K. ; Ueda, K. ; Ando, Y. ; Hamaya, K. ; Sadoh, Taizoh ; Miyao, M. / Epitaxial growth of a full-Heusler alloy Co2FeSi on silicon by low-temperature molecular beam epitaxy. In: Thin Solid Films. 2010 ; Vol. 518, No. 6 SUPPL. 1.
@article{a5083980743d47479224d01cdaa3308f,
title = "Epitaxial growth of a full-Heusler alloy Co2FeSi on silicon by low-temperature molecular beam epitaxy",
abstract = "For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi on silicon substrates using low-temperature molecular beam epitaxy (LT-MBE). Although in-situ reflection high energy electron diffraction images clearly show two-dimensional epitaxial growth for growth temperatures (TG) of 60, 130, and 200 °C, cross-sectional transmission electron microscopy experiments reveal that there are single-crystal phases other than Heusler alloys near the interface between Co2FeSi and Si for TG = 130 and 200 °C. On the other hand, almost perfect heterointerfaces are achieved for TG = 60 °C. These results and magnetic measurements indicate that highly epitaxial growth of Co2FeSi thin films on Si is demonstrated only for TG = 60 °C.",
author = "S. Yamada and K. Yamamoto and K. Ueda and Y. Ando and K. Hamaya and Taizoh Sadoh and M. Miyao",
year = "2010",
month = "1",
day = "1",
doi = "10.1016/j.tsf.2009.10.107",
language = "English",
volume = "518",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "6 SUPPL. 1",

}

TY - JOUR

T1 - Epitaxial growth of a full-Heusler alloy Co2FeSi on silicon by low-temperature molecular beam epitaxy

AU - Yamada, S.

AU - Yamamoto, K.

AU - Ueda, K.

AU - Ando, Y.

AU - Hamaya, K.

AU - Sadoh, Taizoh

AU - Miyao, M.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi on silicon substrates using low-temperature molecular beam epitaxy (LT-MBE). Although in-situ reflection high energy electron diffraction images clearly show two-dimensional epitaxial growth for growth temperatures (TG) of 60, 130, and 200 °C, cross-sectional transmission electron microscopy experiments reveal that there are single-crystal phases other than Heusler alloys near the interface between Co2FeSi and Si for TG = 130 and 200 °C. On the other hand, almost perfect heterointerfaces are achieved for TG = 60 °C. These results and magnetic measurements indicate that highly epitaxial growth of Co2FeSi thin films on Si is demonstrated only for TG = 60 °C.

AB - For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi on silicon substrates using low-temperature molecular beam epitaxy (LT-MBE). Although in-situ reflection high energy electron diffraction images clearly show two-dimensional epitaxial growth for growth temperatures (TG) of 60, 130, and 200 °C, cross-sectional transmission electron microscopy experiments reveal that there are single-crystal phases other than Heusler alloys near the interface between Co2FeSi and Si for TG = 130 and 200 °C. On the other hand, almost perfect heterointerfaces are achieved for TG = 60 °C. These results and magnetic measurements indicate that highly epitaxial growth of Co2FeSi thin films on Si is demonstrated only for TG = 60 °C.

UR - http://www.scopus.com/inward/record.url?scp=73649146221&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=73649146221&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.10.107

DO - 10.1016/j.tsf.2009.10.107

M3 - Article

AN - SCOPUS:73649146221

VL - 518

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 6 SUPPL. 1

ER -