Epitaxial growth of a full-Heusler alloy Co2FeSi on silicon by low-temperature molecular beam epitaxy

S. Yamada, K. Yamamoto, K. Ueda, Y. Ando, K. Hamaya, T. Sadoh, M. Miyao

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15 Citations (Scopus)


For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi on silicon substrates using low-temperature molecular beam epitaxy (LT-MBE). Although in-situ reflection high energy electron diffraction images clearly show two-dimensional epitaxial growth for growth temperatures (TG) of 60, 130, and 200 °C, cross-sectional transmission electron microscopy experiments reveal that there are single-crystal phases other than Heusler alloys near the interface between Co2FeSi and Si for TG = 130 and 200 °C. On the other hand, almost perfect heterointerfaces are achieved for TG = 60 °C. These results and magnetic measurements indicate that highly epitaxial growth of Co2FeSi thin films on Si is demonstrated only for TG = 60 °C.

Original languageEnglish
Pages (from-to)S278-S280
JournalThin Solid Films
Issue number6 SUPPL. 1
Publication statusPublished - Jan 1 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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