Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy

L. B. Rowland, R. S. Kern, S. Tanaka, Robert F. Davis

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)

Abstract

Monocrystalline AlN(0001) films with few defects were deposited on vicinal α(6H)-SiC(0001) wafers via plasma-assisted, gas-source molecular beam epitaxy within the temperature range of 1050–1200 °C The Al was thermally evaporated from an effusion cell. An electron cyclotron resonance plasma source was used to produce activated nitrogen species. Growth on vicinal Si(100) at 900–1050 °C resulted in smooth, highly oriented A1N(0001) films.

Original languageEnglish
Pages (from-to)2310-2314
Number of pages5
JournalJournal of Materials Research
Volume8
Issue number9
DOIs
Publication statusPublished - Oct 1993
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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