Monocrystalline AlN(0001) films with few defects were deposited on vicinal α(6H)-SiC(0001) wafers via plasma-assisted, gas-source molecular beam epitaxy within the temperature range of 1050–1200 °C The Al was thermally evaporated from an effusion cell. An electron cyclotron resonance plasma source was used to produce activated nitrogen species. Growth on vicinal Si(100) at 900–1050 °C resulted in smooth, highly oriented A1N(0001) films.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering