Epitaxial growth of Al-doped β-FeSi2 on Si by ion beam synthesis

Yoshihito Maeda, Yoshikazu Terai, Masaru Itakura

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Ion-beam-synthesized (IBS) β-FeSi2/Si(100) heterojunctions were observed by transmission electron microscopy (TEM) and atomic force microscopy (AFM). Clear epitaxial growth of β-FeSi2 on Si(111) and large crystal domains laterally grown on the surface were demonstrated in Al-doped samples. The optical processes near the heterojunction were examined by photoluminescence spectra measured on the different optical configurations. The epitaxial growth due to Al doping was found to be effective in reducing the density of nonradiative recombination centers and enhancing an electron-hole injection. Solid phase epitaxy (SPE) of Si taking place at the Al-doped interface was found to be the dominant contribution to lateral growth on the surface and epitaxial growth of β-FeSi2.

Original languageEnglish
Pages (from-to)2502-2505
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
Publication statusPublished - Apr 1 2005

Fingerprint

Epitaxial growth
Ion beams
ion beams
synthesis
Heterojunctions
heterojunctions
epitaxy
solid phases
Atomic force microscopy
Photoluminescence
Doping (additives)
atomic force microscopy
injection
Transmission electron microscopy
photoluminescence
transmission electron microscopy
Crystals
Electrons
configurations
crystals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Epitaxial growth of Al-doped β-FeSi2 on Si by ion beam synthesis. / Maeda, Yoshihito; Terai, Yoshikazu; Itakura, Masaru.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 4 B, 01.04.2005, p. 2502-2505.

Research output: Contribution to journalArticle

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