Ion-beam-synthesized (IBS) β-FeSi2/Si(100) heterojunctions were observed by transmission electron microscopy (TEM) and atomic force microscopy (AFM). Clear epitaxial growth of β-FeSi2 on Si(111) and large crystal domains laterally grown on the surface were demonstrated in Al-doped samples. The optical processes near the heterojunction were examined by photoluminescence spectra measured on the different optical configurations. The epitaxial growth due to Al doping was found to be effective in reducing the density of nonradiative recombination centers and enhancing an electron-hole injection. Solid phase epitaxy (SPE) of Si taking place at the Al-doped interface was found to be the dominant contribution to lateral growth on the surface and epitaxial growth of β-FeSi2.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|Publication status||Published - Apr 1 2005|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)