Abstract
The authors review the growth conditions, properties, and applications of epitaxial alkaline earth fluoride films on Si substrates. The lattice mismatches of CaF//2, SrF//2, and BaF//2 to Si are about 0. 6%, 6. 8%, and 14. 2% at room temperature, respectively. The films are grown by molecular beam epitaxy or vacuum-deposition onto heated substrates, in which molecular beams of the fluorides are formed by evaporating polycrystalline fluoride grains.
| Original language | English |
|---|---|
| Number of pages | 1 |
| Journal | Electrochemical Society Extended Abstracts |
| Volume | 85-1 |
| Publication status | Published - Jan 1 1985 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Engineering(all)