EPITAXIAL GROWTH OF ALKALINE EARTH FLUORIDE FILMS ON Si SUBSTRATES.

Hiroshi Ishiwara; Tanemasa Asano

EPITAXIAL GROWTH OF ALKALINE EARTH FLUORIDE FILMS ON Si SUBSTRATES.

Hiroshi Ishiwara, Tanemasa Asano

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Abstract

The authors review the growth conditions, properties, and applications of epitaxial alkaline earth fluoride films on Si substrates. The lattice mismatches of CaF//2, SrF//2, and BaF//2 to Si are about 0. 6%, 6. 8%, and 14. 2% at room temperature, respectively. The films are grown by molecular beam epitaxy or vacuum-deposition onto heated substrates, in which molecular beams of the fluorides are formed by evaporating polycrystalline fluoride grains.

Original language	English
Number of pages	1
Journal	Electrochemical Society Extended Abstracts
Volume	85-1
Publication status	Published - Jan 1 1985

All Science Journal Classification (ASJC) codes

Engineering(all)

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Ishiwara, H., & Asano, T. (1985). EPITAXIAL GROWTH OF ALKALINE EARTH FLUORIDE FILMS ON Si SUBSTRATES. Electrochemical Society Extended Abstracts, 85-1.

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abstract = "The authors review the growth conditions, properties, and applications of epitaxial alkaline earth fluoride films on Si substrates. The lattice mismatches of CaF//2, SrF//2, and BaF//2 to Si are about 0. 6%, 6. 8%, and 14. 2% at room temperature, respectively. The films are grown by molecular beam epitaxy or vacuum-deposition onto heated substrates, in which molecular beams of the fluorides are formed by evaporating polycrystalline fluoride grains.",

author = "Hiroshi Ishiwara and Tanemasa Asano",

year = "1985",

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language = "English",

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AU - Ishiwara, Hiroshi

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N2 - The authors review the growth conditions, properties, and applications of epitaxial alkaline earth fluoride films on Si substrates. The lattice mismatches of CaF//2, SrF//2, and BaF//2 to Si are about 0. 6%, 6. 8%, and 14. 2% at room temperature, respectively. The films are grown by molecular beam epitaxy or vacuum-deposition onto heated substrates, in which molecular beams of the fluorides are formed by evaporating polycrystalline fluoride grains.

AB - The authors review the growth conditions, properties, and applications of epitaxial alkaline earth fluoride films on Si substrates. The lattice mismatches of CaF//2, SrF//2, and BaF//2 to Si are about 0. 6%, 6. 8%, and 14. 2% at room temperature, respectively. The films are grown by molecular beam epitaxy or vacuum-deposition onto heated substrates, in which molecular beams of the fluorides are formed by evaporating polycrystalline fluoride grains.

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