EPITAXIAL GROWTH OF ALKALINE EARTH FLUORIDE FILMS ON Si SUBSTRATES.

Hiroshi Ishiwara, Tanemasa Asano

Research output: Contribution to journal › Conference article

Abstract

The authors review the growth conditions, properties, and applications of epitaxial alkaline earth fluoride films on Si substrates. The lattice mismatches of CaF//2, SrF//2, and BaF//2 to Si are about 0. 6%, 6. 8%, and 14. 2% at room temperature, respectively. The films are grown by molecular beam epitaxy or vacuum-deposition onto heated substrates, in which molecular beams of the fluorides are formed by evaporating polycrystalline fluoride grains.

Original languageEnglish
Number of pages1
JournalElectrochemical Society Extended Abstracts
Volume85-1
Publication statusPublished - Jan 1 1985

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Epitaxial growth
Earth (planet)
Vacuum deposition
Lattice mismatch
Molecular beams
Substrates
Molecular beam epitaxy
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

EPITAXIAL GROWTH OF ALKALINE EARTH FLUORIDE FILMS ON Si SUBSTRATES. / Ishiwara, Hiroshi; Asano, Tanemasa.

In: Electrochemical Society Extended Abstracts, Vol. 85-1, 01.01.1985.

Research output: Contribution to journal › Conference article

Ishiwara, H & Asano, T 1985, 'EPITAXIAL GROWTH OF ALKALINE EARTH FLUORIDE FILMS ON Si SUBSTRATES.', Electrochemical Society Extended Abstracts, vol. 85-1.
Ishiwara H, Asano T. EPITAXIAL GROWTH OF ALKALINE EARTH FLUORIDE FILMS ON Si SUBSTRATES. Electrochemical Society Extended Abstracts. 1985 Jan 1;85-1.
Ishiwara, Hiroshi ; Asano, Tanemasa. / EPITAXIAL GROWTH OF ALKALINE EARTH FLUORIDE FILMS ON Si SUBSTRATES. In: Electrochemical Society Extended Abstracts. 1985 ; Vol. 85-1.
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