Epitaxial growth of (Alx Ga1- x )2O3thin films on sapphire substrates by plasma assisted pulsed laser deposition

Zewei Chen; Makoto Arita; Katsuhiko Saito; Tooru Tanaka; Qixin Guo

doi:10.1063/5.0046237

Epitaxial growth of (Al_xGa_{1- x})₂O₃thin films on sapphire substrates by plasma assisted pulsed laser deposition

Zewei Chen, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, Qixin Guo

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

(AlxGa1-x)2O3 was grown on a-plane sapphire substrates at 500 °C by plasma assisted pulsed laser deposition (PLD) in the whole Al concentration range. The films were characterized using x-ray photoelectron spectroscopy (XPS), x-ray diffraction, atomic force microscopy, and spectrophotometry. By using XPS to measure the bandgap of the films, it was found that as the Al concentration x changes from 0.00 to 1.00, the bandgap ranges from 5.3 to 8.5 eV. The results show that plasma assisted PLD is a promising method to grow ultra-wide bandgap (AlxGa1-x)2O3 at low temperatures, which paves the way for the application of power devices and other functional devices based on (AlxGa1-x)2O3.

Original language	English
Article number	035319
Journal	AIP Advances
Volume	11
Issue number	3
DOIs	https://doi.org/10.1063/5.0046237
Publication status	Published - Mar 1 2021

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/5.0046237

Cite this

@article{3b100d1449f94fb2a10ebae6fe9df053,

title = "Epitaxial growth of (Alx Ga1- x )2O3thin films on sapphire substrates by plasma assisted pulsed laser deposition",

abstract = "(AlxGa1-x)2O3 was grown on a-plane sapphire substrates at 500 °C by plasma assisted pulsed laser deposition (PLD) in the whole Al concentration range. The films were characterized using x-ray photoelectron spectroscopy (XPS), x-ray diffraction, atomic force microscopy, and spectrophotometry. By using XPS to measure the bandgap of the films, it was found that as the Al concentration x changes from 0.00 to 1.00, the bandgap ranges from 5.3 to 8.5 eV. The results show that plasma assisted PLD is a promising method to grow ultra-wide bandgap (AlxGa1-x)2O3 at low temperatures, which paves the way for the application of power devices and other functional devices based on (AlxGa1-x)2O3.",

author = "Zewei Chen and Makoto Arita and Katsuhiko Saito and Tooru Tanaka and Qixin Guo",

note = "Funding Information: This work was partially supported by the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science, and Technology, Japan. We thank the Japan Society for Promotion of Science (JSPS) for providing grants (KAKENHI Grant No. 19K04492). Publisher Copyright: {\textcopyright} 2021 Author(s).",

year = "2021",

month = mar,

day = "1",

doi = "10.1063/5.0046237",

language = "English",

volume = "11",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Epitaxial growth of (Alx Ga1- x )2O3thin films on sapphire substrates by plasma assisted pulsed laser deposition

AU - Chen, Zewei

AU - Arita, Makoto

AU - Saito, Katsuhiko

AU - Tanaka, Tooru

AU - Guo, Qixin

N1 - Funding Information: This work was partially supported by the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science, and Technology, Japan. We thank the Japan Society for Promotion of Science (JSPS) for providing grants (KAKENHI Grant No. 19K04492). Publisher Copyright: © 2021 Author(s).

PY - 2021/3/1

Y1 - 2021/3/1

N2 - (AlxGa1-x)2O3 was grown on a-plane sapphire substrates at 500 °C by plasma assisted pulsed laser deposition (PLD) in the whole Al concentration range. The films were characterized using x-ray photoelectron spectroscopy (XPS), x-ray diffraction, atomic force microscopy, and spectrophotometry. By using XPS to measure the bandgap of the films, it was found that as the Al concentration x changes from 0.00 to 1.00, the bandgap ranges from 5.3 to 8.5 eV. The results show that plasma assisted PLD is a promising method to grow ultra-wide bandgap (AlxGa1-x)2O3 at low temperatures, which paves the way for the application of power devices and other functional devices based on (AlxGa1-x)2O3.

AB - (AlxGa1-x)2O3 was grown on a-plane sapphire substrates at 500 °C by plasma assisted pulsed laser deposition (PLD) in the whole Al concentration range. The films were characterized using x-ray photoelectron spectroscopy (XPS), x-ray diffraction, atomic force microscopy, and spectrophotometry. By using XPS to measure the bandgap of the films, it was found that as the Al concentration x changes from 0.00 to 1.00, the bandgap ranges from 5.3 to 8.5 eV. The results show that plasma assisted PLD is a promising method to grow ultra-wide bandgap (AlxGa1-x)2O3 at low temperatures, which paves the way for the application of power devices and other functional devices based on (AlxGa1-x)2O3.

UR - http://www.scopus.com/inward/record.url?scp=85102571083&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85102571083&partnerID=8YFLogxK

U2 - 10.1063/5.0046237

DO - 10.1063/5.0046237

M3 - Article

AN - SCOPUS:85102571083

SN - 2158-3226

VL - 11

JO - AIP Advances

JF - AIP Advances

IS - 3

M1 - 035319

ER -

Epitaxial growth of (Al_xGa_{1- x})₂O₃thin films on sapphire substrates by plasma assisted pulsed laser deposition

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this