Epitaxial growth of (Alx Ga1- x )2O3thin films on sapphire substrates by plasma assisted pulsed laser deposition

Zewei Chen, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, Qixin Guo

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    (AlxGa1-x)2O3 was grown on a-plane sapphire substrates at 500 °C by plasma assisted pulsed laser deposition (PLD) in the whole Al concentration range. The films were characterized using x-ray photoelectron spectroscopy (XPS), x-ray diffraction, atomic force microscopy, and spectrophotometry. By using XPS to measure the bandgap of the films, it was found that as the Al concentration x changes from 0.00 to 1.00, the bandgap ranges from 5.3 to 8.5 eV. The results show that plasma assisted PLD is a promising method to grow ultra-wide bandgap (AlxGa1-x)2O3 at low temperatures, which paves the way for the application of power devices and other functional devices based on (AlxGa1-x)2O3.

    Original languageEnglish
    Article number035319
    JournalAIP Advances
    Volume11
    Issue number3
    DOIs
    Publication statusPublished - Mar 1 2021

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

    Fingerprint

    Dive into the research topics of 'Epitaxial growth of (Alx Ga1- x )2O3thin films on sapphire substrates by plasma assisted pulsed laser deposition'. Together they form a unique fingerprint.

    Cite this