Epitaxial growth of (Alx Ga1- x )2O3thin films on sapphire substrates by plasma assisted pulsed laser deposition

Zewei Chen, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, Qixin Guo

Research output: Contribution to journalArticlepeer-review

Abstract

(AlxGa1-x)2O3 was grown on a-plane sapphire substrates at 500 °C by plasma assisted pulsed laser deposition (PLD) in the whole Al concentration range. The films were characterized using x-ray photoelectron spectroscopy (XPS), x-ray diffraction, atomic force microscopy, and spectrophotometry. By using XPS to measure the bandgap of the films, it was found that as the Al concentration x changes from 0.00 to 1.00, the bandgap ranges from 5.3 to 8.5 eV. The results show that plasma assisted PLD is a promising method to grow ultra-wide bandgap (AlxGa1-x)2O3 at low temperatures, which paves the way for the application of power devices and other functional devices based on (AlxGa1-x)2O3.

Original languageEnglish
Article number035319
JournalAIP Advances
Volume11
Issue number3
DOIs
Publication statusPublished - Mar 1 2021

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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