Epitaxial growth of Ba 8 Ga 16 Ge 30 clathrate film on Si substrate by RF helicon magnetron sputtering with evaluation on thermoelectric properties

L. Miao, S. Tanemura, T. Watanabe, M. Tanemura, S. Toh, Kenji Kaneko, Y. Sugahara, T. Hirayama

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Epitaxial Ba 8 Ga 16 Ge 30 clathrate thin films were successfully grown on Si substrate by using helicon magnetron sputtering. The (1 0 0) lattice of Ba 8 Ga 16 Ge 30 was identified grown on four Si(2 0 0) lattices in small mismatch (0.1%). Both the color of samples and XRD results suggest 600 °C is the optimal substrate temperature for the growth of high quality Ba-Ga-Ge clathrate film on Si substrates. High Seebeck coefficients and electrical resistivities for the deposited clathrate thin films in comparison with those of bulk are obtained. The high crystal quality and thermionic effects in heterostructures may contribute to the larger Seebeck coefficients, while the increasing of interface scattering for electrons probably is the reason for large electrical resistivities. Although the thermoelectric (TE) results are not ideal as designed, our results are significant due to the first successful work on epitaxial growth of Ba 8 Ga 16 Ge 30 clathrate thin films on Si substrate with large Seebeck coefficient.

Original languageEnglish
Pages (from-to)167-172
Number of pages6
JournalApplied Surface Science
Volume254
Issue number1 SPEC. ISS.
DOIs
Publication statusPublished - Oct 31 2007

Fingerprint

Helicons
clathrates
Epitaxial growth
Magnetron sputtering
Seebeck coefficient
magnetron sputtering
Seebeck effect
evaluation
Substrates
Thin films
electrical resistivity
thin films
thermionics
Heterojunctions
Scattering
Color
color
Crystals
Electrons
scattering

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Epitaxial growth of Ba 8 Ga 16 Ge 30 clathrate film on Si substrate by RF helicon magnetron sputtering with evaluation on thermoelectric properties . / Miao, L.; Tanemura, S.; Watanabe, T.; Tanemura, M.; Toh, S.; Kaneko, Kenji; Sugahara, Y.; Hirayama, T.

In: Applied Surface Science, Vol. 254, No. 1 SPEC. ISS., 31.10.2007, p. 167-172.

Research output: Contribution to journalArticle

Miao, L. ; Tanemura, S. ; Watanabe, T. ; Tanemura, M. ; Toh, S. ; Kaneko, Kenji ; Sugahara, Y. ; Hirayama, T. / Epitaxial growth of Ba 8 Ga 16 Ge 30 clathrate film on Si substrate by RF helicon magnetron sputtering with evaluation on thermoelectric properties In: Applied Surface Science. 2007 ; Vol. 254, No. 1 SPEC. ISS. pp. 167-172.
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AU - Kaneko, Kenji

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