Abstract
Epitaxial growth of Si and Ge films onto silicide/Si and fluoride/Si structures has been reviewed. Growth conditions of epitaxial silicide films such as Pd//2Si, CoSi//2, and NiSi//2 films on Si substrates, as well as heteroepitaxial Si/CoSi//2/Si structures, are presented. Crystalline quality and structural properties of the films have been analyzed by Rutherford backscattering and channeling spectroscopy, transmission electron microscopy, optical microscopy, and x-ray diffraction analysis. Growth conditions of fluoride films such as CaF//2, SrF//2, and BaF//2 films on Si substrates are also presented.
| Original language | English |
|---|---|
| Pages (from-to) | 266-271 |
| Number of pages | 6 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 1 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Jan 1 1982 |
| Externally published | Yes |
| Event | Proc of the Int Conf on Metastable and Modulated Semicond Struct - Pasadena, CA, USA Duration: Dec 6 1982 → Dec 10 1982 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering