EPITAXIAL GROWTH OF ELEMENTAL SEMICONDUCTOR FILMS ONTO SILICIDE/Si AND FLUORIDE/Si STRUCTURES.

H. Ishiwara, Tanemasa Asano, S. Furukawa

Research output: Contribution to journalConference article

20 Citations (Scopus)

Abstract

Epitaxial growth of Si and Ge films onto silicide/Si and fluoride/Si structures has been reviewed. Growth conditions of epitaxial silicide films such as Pd//2Si, CoSi//2, and NiSi//2 films on Si substrates, as well as heteroepitaxial Si/CoSi//2/Si structures, are presented. Crystalline quality and structural properties of the films have been analyzed by Rutherford backscattering and channeling spectroscopy, transmission electron microscopy, optical microscopy, and x-ray diffraction analysis. Growth conditions of fluoride films such as CaF//2, SrF//2, and BaF//2 films on Si substrates are also presented.

Original languageEnglish
Pages (from-to)266-271
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number2
DOIs
Publication statusPublished - Jan 1 1982
EventProc of the Int Conf on Metastable and Modulated Semicond Struct - Pasadena, CA, USA
Duration: Dec 6 1982Dec 10 1982

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Epitaxial growth
Semiconductor materials
fluorides
Epitaxial films
Rutherford backscattering spectroscopy
Substrates
Optical microscopy
Structural properties
Diffraction
Spectroscopy
backscattering
Crystalline materials
Transmission electron microscopy
x ray diffraction
X rays
microscopy
transmission electron microscopy
spectroscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

EPITAXIAL GROWTH OF ELEMENTAL SEMICONDUCTOR FILMS ONTO SILICIDE/Si AND FLUORIDE/Si STRUCTURES. / Ishiwara, H.; Asano, Tanemasa; Furukawa, S.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 1, No. 2, 01.01.1982, p. 266-271.

Research output: Contribution to journalConference article

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