Epitaxial growth of the ferromagnetic suicide Fe3Si on Si substrates was investigated using molecular beam epitaxy. X-ray diffraction (XRD) measurements revealed that the Fe3Si phase was formed at 60-300°C, and the FeSi phase was formed at 400°C. From the results of XRD and transmission electron microscopy measurements, it was found that the Fe3Si(111) layers were epitaxially grown on Si(111) substrates, while random poly-crystal Fe3Si layers were formed on Si(100) substrates. Detailed XRD measurements showed that a small amount of DO3-type Fe 3Si was formed together with the B2-type Fe3Si. Vibrating sample magnetometer measurements revealed that Fe3Si(111) layers on Si(111) substrates have in-plane magnetic anisotropy with a period of 180°.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|Publication status||Published - Apr 25 2006|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)