Epitaxial growth of ferromagnetic silicide Fe3Si on Si(111) substrate

Taizoh Sadoh; Hisashi Takeuchl; Koji Ueda; Atsushi Kenjo; Masanobu Miyao

doi:10.1143/JJAP.45.3598

Epitaxial growth of ferromagnetic silicide Fe₃Si on Si(111) substrate

Taizoh Sadoh, Hisashi Takeuchl, Koji Ueda, Atsushi Kenjo, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Epitaxial growth of the ferromagnetic suicide Fe₃Si on Si substrates was investigated using molecular beam epitaxy. X-ray diffraction (XRD) measurements revealed that the Fe₃Si phase was formed at 60-300°C, and the FeSi phase was formed at 400°C. From the results of XRD and transmission electron microscopy measurements, it was found that the Fe₃Si(111) layers were epitaxially grown on Si(111) substrates, while random poly-crystal Fe₃Si layers were formed on Si(100) substrates. Detailed XRD measurements showed that a small amount of DO3-type Fe ₃Si was formed together with the B2-type Fe₃Si. Vibrating sample magnetometer measurements revealed that Fe₃Si(111) layers on Si(111) substrates have in-plane magnetic anisotropy with a period of 180°.

Original language	English
Pages (from-to)	3598-3600
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.45.3598
Publication status	Published - Apr 25 2006

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1143/JJAP.45.3598

Cite this

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title = "Epitaxial growth of ferromagnetic silicide Fe3Si on Si(111) substrate",

abstract = "Epitaxial growth of the ferromagnetic suicide Fe3Si on Si substrates was investigated using molecular beam epitaxy. X-ray diffraction (XRD) measurements revealed that the Fe3Si phase was formed at 60-300°C, and the FeSi phase was formed at 400°C. From the results of XRD and transmission electron microscopy measurements, it was found that the Fe3Si(111) layers were epitaxially grown on Si(111) substrates, while random poly-crystal Fe3Si layers were formed on Si(100) substrates. Detailed XRD measurements showed that a small amount of DO3-type Fe 3Si was formed together with the B2-type Fe3Si. Vibrating sample magnetometer measurements revealed that Fe3Si(111) layers on Si(111) substrates have in-plane magnetic anisotropy with a period of 180°.",

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T1 - Epitaxial growth of ferromagnetic silicide Fe3Si on Si(111) substrate

AU - Sadoh, Taizoh

AU - Takeuchl, Hisashi

AU - Ueda, Koji

AU - Kenjo, Atsushi

AU - Miyao, Masanobu

PY - 2006/4/25

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N2 - Epitaxial growth of the ferromagnetic suicide Fe3Si on Si substrates was investigated using molecular beam epitaxy. X-ray diffraction (XRD) measurements revealed that the Fe3Si phase was formed at 60-300°C, and the FeSi phase was formed at 400°C. From the results of XRD and transmission electron microscopy measurements, it was found that the Fe3Si(111) layers were epitaxially grown on Si(111) substrates, while random poly-crystal Fe3Si layers were formed on Si(100) substrates. Detailed XRD measurements showed that a small amount of DO3-type Fe 3Si was formed together with the B2-type Fe3Si. Vibrating sample magnetometer measurements revealed that Fe3Si(111) layers on Si(111) substrates have in-plane magnetic anisotropy with a period of 180°.

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