Epitaxial growth of ge films onto caf 2/si structures

Tanemasa Asano, Hiroshi Ishiwara

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Abstract

Heteroepitaxial Ge(insulator/Si structures have been prepared by vacuum evaporation of CaF2and Ge onto heated (111) and (100) oriented Si substrates. CaF2films with high crystalline perfection and smooth surface were formed on (111) and (lOO)Si at substrate temperatures of 800°C and 600°C, respectively. Ge films were deposited onto the CaF2/Si structures at 400°C to 600°C. Higher Ge deposition temperature resulted in increased Ge surface roughness but improved Ge crystalline quality. Both the crystalline quality and the electrical properties of the Ge films on CaF2/Si(100) structures were superior to those of the Ge films on CaF2/Si(111) structures.

Original languageEnglish
Pages (from-to)L630-L632
JournalJapanese Journal of Applied Physics
Volume21
Issue number10
DOIs
Publication statusPublished - Oct 1982

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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