Epitaxial growth of room-temperature ferrimagnetic semiconductor thin films based on the ilmenite-hematite solid solution

Hajime Hojo, Koji Fujita, Katsuhisa Tanaka, Kazuyuki Hirao

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Epitaxial thin films composed of O.7FeTiO3·0.3Fe 2O3 solid solution have been prepared on α-Al 2O3 (0001) substrates by a pulsed laser deposition method, and their electrical and magnetic properties have been examined. A single phase of the ordered phase can be obtained under limited deposition conditions: oxygen partial pressure of 1.0×10-3Pa and substrate temperature of 600-700°C. The as-deposited film is semiconducting and ferrimagnetic below room temperature, while subsequent annealing in vacuum leads to the Curie temperature above room temperature. On the other hand, the thin films with the disordered phase appear to be antiferromagnetic and also insulating.

Original languageEnglish
Article number082509
JournalApplied Physics Letters
Volume89
Issue number8
DOIs
Publication statusPublished - Sep 5 2006

Fingerprint

ilmenite
hematite
solid solutions
semiconducting films
room temperature
thin films
pulsed laser deposition
partial pressure
Curie temperature
electrical properties
magnetic properties
vacuum
annealing
oxygen
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Epitaxial growth of room-temperature ferrimagnetic semiconductor thin films based on the ilmenite-hematite solid solution. / Hojo, Hajime; Fujita, Koji; Tanaka, Katsuhisa; Hirao, Kazuyuki.

In: Applied Physics Letters, Vol. 89, No. 8, 082509, 05.09.2006.

Research output: Contribution to journalArticle

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