Abstract
Epitaxial thin films composed of O.7FeTiO3·0.3Fe 2O3 solid solution have been prepared on α-Al 2O3 (0001) substrates by a pulsed laser deposition method, and their electrical and magnetic properties have been examined. A single phase of the ordered phase can be obtained under limited deposition conditions: oxygen partial pressure of 1.0×10-3Pa and substrate temperature of 600-700°C. The as-deposited film is semiconducting and ferrimagnetic below room temperature, while subsequent annealing in vacuum leads to the Curie temperature above room temperature. On the other hand, the thin films with the disordered phase appear to be antiferromagnetic and also insulating.
Original language | English |
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Article number | 082509 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 8 |
DOIs | |
Publication status | Published - Sep 5 2006 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
Epitaxial growth of room-temperature ferrimagnetic semiconductor thin films based on the ilmenite-hematite solid solution. / Hojo, Hajime; Fujita, Koji; Tanaka, Katsuhisa; Hirao, Kazuyuki.
In: Applied Physics Letters, Vol. 89, No. 8, 082509, 05.09.2006.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Epitaxial growth of room-temperature ferrimagnetic semiconductor thin films based on the ilmenite-hematite solid solution
AU - Hojo, Hajime
AU - Fujita, Koji
AU - Tanaka, Katsuhisa
AU - Hirao, Kazuyuki
PY - 2006/9/5
Y1 - 2006/9/5
N2 - Epitaxial thin films composed of O.7FeTiO3·0.3Fe 2O3 solid solution have been prepared on α-Al 2O3 (0001) substrates by a pulsed laser deposition method, and their electrical and magnetic properties have been examined. A single phase of the ordered phase can be obtained under limited deposition conditions: oxygen partial pressure of 1.0×10-3Pa and substrate temperature of 600-700°C. The as-deposited film is semiconducting and ferrimagnetic below room temperature, while subsequent annealing in vacuum leads to the Curie temperature above room temperature. On the other hand, the thin films with the disordered phase appear to be antiferromagnetic and also insulating.
AB - Epitaxial thin films composed of O.7FeTiO3·0.3Fe 2O3 solid solution have been prepared on α-Al 2O3 (0001) substrates by a pulsed laser deposition method, and their electrical and magnetic properties have been examined. A single phase of the ordered phase can be obtained under limited deposition conditions: oxygen partial pressure of 1.0×10-3Pa and substrate temperature of 600-700°C. The as-deposited film is semiconducting and ferrimagnetic below room temperature, while subsequent annealing in vacuum leads to the Curie temperature above room temperature. On the other hand, the thin films with the disordered phase appear to be antiferromagnetic and also insulating.
UR - http://www.scopus.com/inward/record.url?scp=33748112272&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33748112272&partnerID=8YFLogxK
U2 - 10.1063/1.2337276
DO - 10.1063/1.2337276
M3 - Article
AN - SCOPUS:33748112272
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 8
M1 - 082509
ER -