Epitaxial growth of room-temperature ferrimagnetic semiconductor thin films based on the ilmenite-hematite solid solution

Hajime Hojo; Koji Fujita; Katsuhisa Tanaka; Kazuyuki Hirao

doi:10.1063/1.2337276

Epitaxial growth of room-temperature ferrimagnetic semiconductor thin films based on the ilmenite-hematite solid solution

Hajime Hojo, Koji Fujita, Katsuhisa Tanaka, Kazuyuki Hirao

Research output: Contribution to journal › Article

28 Citations (Scopus)

Abstract

Epitaxial thin films composed of O.7FeTiO₃·0.3Fe ₂O₃ solid solution have been prepared on α-Al ₂O₃ (0001) substrates by a pulsed laser deposition method, and their electrical and magnetic properties have been examined. A single phase of the ordered phase can be obtained under limited deposition conditions: oxygen partial pressure of 1.0×10^-3Pa and substrate temperature of 600-700°C. The as-deposited film is semiconducting and ferrimagnetic below room temperature, while subsequent annealing in vacuum leads to the Curie temperature above room temperature. On the other hand, the thin films with the disordered phase appear to be antiferromagnetic and also insulating.

Original language	English
Article number	082509
Journal	Applied Physics Letters
Volume	89
Issue number	8
DOIs	https://doi.org/10.1063/1.2337276
Publication status	Published - Sep 5 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2337276

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Hojo, H., Fujita, K., Tanaka, K., & Hirao, K. (2006). Epitaxial growth of room-temperature ferrimagnetic semiconductor thin films based on the ilmenite-hematite solid solution. Applied Physics Letters, 89(8), [082509]. https://doi.org/10.1063/1.2337276

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abstract = "Epitaxial thin films composed of O.7FeTiO3·0.3Fe 2O3 solid solution have been prepared on α-Al 2O3 (0001) substrates by a pulsed laser deposition method, and their electrical and magnetic properties have been examined. A single phase of the ordered phase can be obtained under limited deposition conditions: oxygen partial pressure of 1.0×10-3Pa and substrate temperature of 600-700°C. The as-deposited film is semiconducting and ferrimagnetic below room temperature, while subsequent annealing in vacuum leads to the Curie temperature above room temperature. On the other hand, the thin films with the disordered phase appear to be antiferromagnetic and also insulating.",

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