Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates

S. Leone, A. Henry, E. Janzén, Shinichi Nishizawa

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

This study focuses on the epitaxial growth of silicon carbide (SiC) epitaxial layers, adopting the chloride-based chemical-vapor-deposition (CVD) process, which allows to achieve ten times higher growth rate compared to the standard process based on the mixture of a silicon-containing gas and a hydrocarbon. In order to improve the material quality, substrates with different off-angles were used, since low off-angle substrates result in a reduction of killer defects for specific devices. Different growth mechanisms dominate for different substrate off-cut and an accurate set up of dedicated surface preparation procedures and tuning of growth parameters are needed. This study demonstrates that silicon-rich gas inputs are favorable for lower off-angle (nominally on-axis) substrates, while carbon-rich are beneficial for higher off-angles (usually 8° off-axis for 4H-SiC). Methyltrichlorosilane (MTS) is shown to be the best precursor to achieve the presented results.

Original languageEnglish
Pages (from-to)170-173
Number of pages4
JournalJournal of Crystal Growth
Volume362
Issue number1
DOIs
Publication statusPublished - Jan 1 2013
Externally publishedYes

Fingerprint

Epitaxial growth
Silicon carbide
silicon carbides
Silicon
Substrates
Gases
Epitaxial layers
silicon
Hydrocarbons
gases
Chlorides
Chemical vapor deposition
Carbon
Tuning
hydrocarbons
chlorides
tuning
vapor deposition
Defects
preparation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates. / Leone, S.; Henry, A.; Janzén, E.; Nishizawa, Shinichi.

In: Journal of Crystal Growth, Vol. 362, No. 1, 01.01.2013, p. 170-173.

Research output: Contribution to journalArticle

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