Epitaxial growth of Zn1−xMg xO films on sapphire substrates via inverted Stranski-Krastanov mode using magnetron sputtering

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Abstract

We have succeeded in epitaxial growth of high-quality Zn1−xMgxO films of x = 0.04–0.33 on 18%-lattice mismatched sapphire substrates using magnetron sputtering. The films have grown in inverted Stranski-Krastanov (inverted SK) mode, where a buffer layer consisting of three-dimensional islands initially forms and a relaxed two-dimensional layer subsequently grows on the buffer layer. The resultant films have flat surfaces with root-mean-square roughness of 0.43–0.75 nm and are of high-crystal qualities even for large Mg contents; the full widths at half maximum of (0002) x-ray rocking curves are 0.05° (x = 0.33) and 0.07° (x = 0.14). Furthermore, we observed that the optical absorption edge shifts continuously toward the shorter wavelength with increasing x, and the band gap has been tuned from 3.5 to 4.3 eV. These results show that the inverted SK mode is useful for fabricating high-quality Zn1−xMgxO films with wide-range tunability of band gaps. Graphical abstract: [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)415-419
Number of pages5
JournalMRS Advances
Volume7
Issue number20
DOIs
Publication statusPublished - May 2022

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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