Epitaxial orientation and morphology of β-FeSi2 produced on a flat and a patterned Si(001) substrates

Masaru Itakura, N. Kishikawa, R. Kawashita, N. Kuwano

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The epitaxial growth of β-FeSi2 films produced on flat and patterned Si(001) substrates under various substrate temperatures (Ts) with deposition rates of Fe (VFe) was investigated by transmission electron microscopy (TEM). In the film deposited on the flat Si(001) substrate, precipitates of flat-bottom shaped β-FeSi2 and those of round-bottom shaped α-FeSi2 were formed at Ts = 500 °C and VFe = 0.02 nm/s. The β-FeSi2 adopted the epitaxy to (001)Si plane, while α-FeSi2 selected the epitaxy to {111}Si planes inside the Si matrix. At Ts = 350 °C and VFe = 0.01 nm/s, a continuous β-FeSi2 layer were formed epitaxially on the Si(001) substrate without forming α-FeSi2. It was found that the lower temperature and the higher Fe-concentration suppress the formation of α-FeSi2 and promote the formation of β-FeSi2. In addition, the morphology of β-FeSi2 changed from fine isolated precipitates (islands) to a continuous layer with increasing the deposition rate and the substrate temperature. In the film deposited on the patterned Si(001) substrate at Ts = 500 °C and VFe = 0.02 nm/s, on the other hand, both β- and α-FeSi2 precipitates were formed on the top-hills and the valleys of the patterned substrate, while only α-FeSi2 precipitates were formed on the sidewalls. These results demonstrate that not only the growth conditions but also geometric situations affect strongly the epitaxial growth of FeSi2 precipitates.

Original languageEnglish
Pages (from-to)8169-8174
Number of pages6
JournalThin Solid Films
Volume515
Issue number22
DOIs
Publication statusPublished - Aug 15 2007

Fingerprint

Precipitates
precipitates
Epitaxial growth
Substrates
Deposition rates
Temperature
epitaxy
temperature
valleys
Transmission electron microscopy
transmission electron microscopy
matrices

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Epitaxial orientation and morphology of β-FeSi2 produced on a flat and a patterned Si(001) substrates. / Itakura, Masaru; Kishikawa, N.; Kawashita, R.; Kuwano, N.

In: Thin Solid Films, Vol. 515, No. 22, 15.08.2007, p. 8169-8174.

Research output: Contribution to journalArticle

Itakura, Masaru ; Kishikawa, N. ; Kawashita, R. ; Kuwano, N. / Epitaxial orientation and morphology of β-FeSi2 produced on a flat and a patterned Si(001) substrates. In: Thin Solid Films. 2007 ; Vol. 515, No. 22. pp. 8169-8174.
@article{2abc97b300b8414bb95c5088e8b75973,
title = "Epitaxial orientation and morphology of β-FeSi2 produced on a flat and a patterned Si(001) substrates",
abstract = "The epitaxial growth of β-FeSi2 films produced on flat and patterned Si(001) substrates under various substrate temperatures (Ts) with deposition rates of Fe (VFe) was investigated by transmission electron microscopy (TEM). In the film deposited on the flat Si(001) substrate, precipitates of flat-bottom shaped β-FeSi2 and those of round-bottom shaped α-FeSi2 were formed at Ts = 500 °C and VFe = 0.02 nm/s. The β-FeSi2 adopted the epitaxy to (001)Si plane, while α-FeSi2 selected the epitaxy to {111}Si planes inside the Si matrix. At Ts = 350 °C and VFe = 0.01 nm/s, a continuous β-FeSi2 layer were formed epitaxially on the Si(001) substrate without forming α-FeSi2. It was found that the lower temperature and the higher Fe-concentration suppress the formation of α-FeSi2 and promote the formation of β-FeSi2. In addition, the morphology of β-FeSi2 changed from fine isolated precipitates (islands) to a continuous layer with increasing the deposition rate and the substrate temperature. In the film deposited on the patterned Si(001) substrate at Ts = 500 °C and VFe = 0.02 nm/s, on the other hand, both β- and α-FeSi2 precipitates were formed on the top-hills and the valleys of the patterned substrate, while only α-FeSi2 precipitates were formed on the sidewalls. These results demonstrate that not only the growth conditions but also geometric situations affect strongly the epitaxial growth of FeSi2 precipitates.",
author = "Masaru Itakura and N. Kishikawa and R. Kawashita and N. Kuwano",
year = "2007",
month = "8",
day = "15",
doi = "10.1016/j.tsf.2007.02.045",
language = "English",
volume = "515",
pages = "8169--8174",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "22",

}

TY - JOUR

T1 - Epitaxial orientation and morphology of β-FeSi2 produced on a flat and a patterned Si(001) substrates

AU - Itakura, Masaru

AU - Kishikawa, N.

AU - Kawashita, R.

AU - Kuwano, N.

PY - 2007/8/15

Y1 - 2007/8/15

N2 - The epitaxial growth of β-FeSi2 films produced on flat and patterned Si(001) substrates under various substrate temperatures (Ts) with deposition rates of Fe (VFe) was investigated by transmission electron microscopy (TEM). In the film deposited on the flat Si(001) substrate, precipitates of flat-bottom shaped β-FeSi2 and those of round-bottom shaped α-FeSi2 were formed at Ts = 500 °C and VFe = 0.02 nm/s. The β-FeSi2 adopted the epitaxy to (001)Si plane, while α-FeSi2 selected the epitaxy to {111}Si planes inside the Si matrix. At Ts = 350 °C and VFe = 0.01 nm/s, a continuous β-FeSi2 layer were formed epitaxially on the Si(001) substrate without forming α-FeSi2. It was found that the lower temperature and the higher Fe-concentration suppress the formation of α-FeSi2 and promote the formation of β-FeSi2. In addition, the morphology of β-FeSi2 changed from fine isolated precipitates (islands) to a continuous layer with increasing the deposition rate and the substrate temperature. In the film deposited on the patterned Si(001) substrate at Ts = 500 °C and VFe = 0.02 nm/s, on the other hand, both β- and α-FeSi2 precipitates were formed on the top-hills and the valleys of the patterned substrate, while only α-FeSi2 precipitates were formed on the sidewalls. These results demonstrate that not only the growth conditions but also geometric situations affect strongly the epitaxial growth of FeSi2 precipitates.

AB - The epitaxial growth of β-FeSi2 films produced on flat and patterned Si(001) substrates under various substrate temperatures (Ts) with deposition rates of Fe (VFe) was investigated by transmission electron microscopy (TEM). In the film deposited on the flat Si(001) substrate, precipitates of flat-bottom shaped β-FeSi2 and those of round-bottom shaped α-FeSi2 were formed at Ts = 500 °C and VFe = 0.02 nm/s. The β-FeSi2 adopted the epitaxy to (001)Si plane, while α-FeSi2 selected the epitaxy to {111}Si planes inside the Si matrix. At Ts = 350 °C and VFe = 0.01 nm/s, a continuous β-FeSi2 layer were formed epitaxially on the Si(001) substrate without forming α-FeSi2. It was found that the lower temperature and the higher Fe-concentration suppress the formation of α-FeSi2 and promote the formation of β-FeSi2. In addition, the morphology of β-FeSi2 changed from fine isolated precipitates (islands) to a continuous layer with increasing the deposition rate and the substrate temperature. In the film deposited on the patterned Si(001) substrate at Ts = 500 °C and VFe = 0.02 nm/s, on the other hand, both β- and α-FeSi2 precipitates were formed on the top-hills and the valleys of the patterned substrate, while only α-FeSi2 precipitates were formed on the sidewalls. These results demonstrate that not only the growth conditions but also geometric situations affect strongly the epitaxial growth of FeSi2 precipitates.

UR - http://www.scopus.com/inward/record.url?scp=34547741024&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547741024&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2007.02.045

DO - 10.1016/j.tsf.2007.02.045

M3 - Article

AN - SCOPUS:34547741024

VL - 515

SP - 8169

EP - 8174

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 22

ER -