Epitaxial Pt films with different orientations grown on (100)Si substrates by RF magnetron sputtering

Shoji Okamoto, Takayuki Watanabe, Kensuke Akiyama, Satoru Kaneko, Hiroshi Funakubo, Susumu Horita

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Epitaxial Pt films with (111) and (100) orientations were grown on Y 2O3-stabilized ZrO2 (YSZ)-covered (100)Si substrates by RF sputtering. (111)Pt films were epitaxially grown on (100)YSZ//(100)Si substrates at 580 and 680°C, but competitive crystal orientations of (111) and (100) at 780°C. In contrast, a (100)-oriented epitaxial Pt film was grown at 550°C on a (100)YSZ//(100)Si substrate with a (100)-oriented epitaxial (100)Ir buffer layer. This orientational control of epitaxial Pt films enables the epitaxial growth of perovskite layers with different orientations on thermally and chemically stable Pt bottom electrodes grown on (100)Si substrates.

Original languageEnglish
Pages (from-to)5102-5106
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number7 A
DOIs
Publication statusPublished - Jul 8 2005
Externally publishedYes

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Epitaxial films
Crystal orientation
Magnetron sputtering
magnetron sputtering
Substrates
Buffer layers
Epitaxial growth
Perovskite
Sputtering
buffers
sputtering
Electrodes
electrodes
crystals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Epitaxial Pt films with different orientations grown on (100)Si substrates by RF magnetron sputtering. / Okamoto, Shoji; Watanabe, Takayuki; Akiyama, Kensuke; Kaneko, Satoru; Funakubo, Hiroshi; Horita, Susumu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 7 A, 08.07.2005, p. 5102-5106.

Research output: Contribution to journalArticle

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