Epitaxial Pt films with (111) and (100) orientations were grown on Y 2O3-stabilized ZrO2 (YSZ)-covered (100)Si substrates by RF sputtering. (111)Pt films were epitaxially grown on (100)YSZ//(100)Si substrates at 580 and 680°C, but competitive crystal orientations of (111) and (100) at 780°C. In contrast, a (100)-oriented epitaxial Pt film was grown at 550°C on a (100)YSZ//(100)Si substrate with a (100)-oriented epitaxial (100)Ir buffer layer. This orientational control of epitaxial Pt films enables the epitaxial growth of perovskite layers with different orientations on thermally and chemically stable Pt bottom electrodes grown on (100)Si substrates.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||7 A|
|Publication status||Published - Jul 8 2005|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)