Epitaxial relations in CaxSr1-xF2 films grown on GaAs {111} and Ge(111) substrates

Kazuo Tsutsui, Hiroshi Ishiwara, Tanemasa Asano, Seijiro Furukawa

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Abstract

Epitaxial relations in CaxSr1-xF2 (0≤x≤1) films grown on GaAs(111), (1̄1̄1̄), and Ge(111) substrates were investigated by He+ ion channeling analysis and transmission electron microscopy. Though the lattice constants of GaAs and Ge are nearly the same, the relations were found to be completely different. That is, the lattice-matched fluoride film on GaAs exhibited an orientation identical to that of the substrate (type A orientation), whereas the orientation of the film on Ge was rotated by 180°about the surface normal 〈111〉 axis (type B orientation). It was also found that the type A growth of the Ca x Sr1-x F2 films is maintained in the whole range of x on the As face of GaAs, while the growth types are partially or totally inverted in the lattice-mismatched fluoride films grown on the Ga face of GaAs and on Ge.

Original languageEnglish
Pages (from-to)1131-1133
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number12
DOIs
Publication statusPublished - Dec 1 1985

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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