Epitaxial relations in CaxSr1-xF2 films grown on GaAs {111} and Ge(111) substrates

Kazuo Tsutsui, Hiroshi Ishiwara, Tanemasa Asano, Seijiro Furukawa

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Epitaxial relations in CaxSr1-xF2 (0≤x≤1) films grown on GaAs(111), (1̄1̄1̄), and Ge(111) substrates were investigated by He+ ion channeling analysis and transmission electron microscopy. Though the lattice constants of GaAs and Ge are nearly the same, the relations were found to be completely different. That is, the lattice-matched fluoride film on GaAs exhibited an orientation identical to that of the substrate (type A orientation), whereas the orientation of the film on Ge was rotated by 180°about the surface normal 〈111〉 axis (type B orientation). It was also found that the type A growth of the Ca x Sr1-x F2 films is maintained in the whole range of x on the As face of GaAs, while the growth types are partially or totally inverted in the lattice-mismatched fluoride films grown on the Ga face of GaAs and on Ge.

Original languageEnglish
Pages (from-to)1131-1133
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number12
DOIs
Publication statusPublished - Dec 1 1985
Externally publishedYes

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fluorides
transmission electron microscopy
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Epitaxial relations in CaxSr1-xF2 films grown on GaAs {111} and Ge(111) substrates. / Tsutsui, Kazuo; Ishiwara, Hiroshi; Asano, Tanemasa; Furukawa, Seijiro.

In: Applied Physics Letters, Vol. 46, No. 12, 01.12.1985, p. 1131-1133.

Research output: Contribution to journalArticle

Tsutsui, K, Ishiwara, H, Asano, T & Furukawa, S 1985, 'Epitaxial relations in CaxSr1-xF2 films grown on GaAs {111} and Ge(111) substrates', Applied Physics Letters, vol. 46, no. 12, pp. 1131-1133. https://doi.org/10.1063/1.95732
Tsutsui, Kazuo ; Ishiwara, Hiroshi ; Asano, Tanemasa ; Furukawa, Seijiro. / Epitaxial relations in CaxSr1-xF2 films grown on GaAs {111} and Ge(111) substrates. In: Applied Physics Letters. 1985 ; Vol. 46, No. 12. pp. 1131-1133.
@article{48f47407f96a4e50bdbc461e83961bea,
title = "Epitaxial relations in CaxSr1-xF2 films grown on GaAs {111} and Ge(111) substrates",
abstract = "Epitaxial relations in CaxSr1-xF2 (0≤x≤1) films grown on GaAs(111), (1̄1̄1̄), and Ge(111) substrates were investigated by He+ ion channeling analysis and transmission electron microscopy. Though the lattice constants of GaAs and Ge are nearly the same, the relations were found to be completely different. That is, the lattice-matched fluoride film on GaAs exhibited an orientation identical to that of the substrate (type A orientation), whereas the orientation of the film on Ge was rotated by 180°about the surface normal 〈111〉 axis (type B orientation). It was also found that the type A growth of the Ca x Sr1-x F2 films is maintained in the whole range of x on the As face of GaAs, while the growth types are partially or totally inverted in the lattice-mismatched fluoride films grown on the Ga face of GaAs and on Ge.",
author = "Kazuo Tsutsui and Hiroshi Ishiwara and Tanemasa Asano and Seijiro Furukawa",
year = "1985",
month = "12",
day = "1",
doi = "10.1063/1.95732",
language = "English",
volume = "46",
pages = "1131--1133",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Epitaxial relations in CaxSr1-xF2 films grown on GaAs {111} and Ge(111) substrates

AU - Tsutsui, Kazuo

AU - Ishiwara, Hiroshi

AU - Asano, Tanemasa

AU - Furukawa, Seijiro

PY - 1985/12/1

Y1 - 1985/12/1

N2 - Epitaxial relations in CaxSr1-xF2 (0≤x≤1) films grown on GaAs(111), (1̄1̄1̄), and Ge(111) substrates were investigated by He+ ion channeling analysis and transmission electron microscopy. Though the lattice constants of GaAs and Ge are nearly the same, the relations were found to be completely different. That is, the lattice-matched fluoride film on GaAs exhibited an orientation identical to that of the substrate (type A orientation), whereas the orientation of the film on Ge was rotated by 180°about the surface normal 〈111〉 axis (type B orientation). It was also found that the type A growth of the Ca x Sr1-x F2 films is maintained in the whole range of x on the As face of GaAs, while the growth types are partially or totally inverted in the lattice-mismatched fluoride films grown on the Ga face of GaAs and on Ge.

AB - Epitaxial relations in CaxSr1-xF2 (0≤x≤1) films grown on GaAs(111), (1̄1̄1̄), and Ge(111) substrates were investigated by He+ ion channeling analysis and transmission electron microscopy. Though the lattice constants of GaAs and Ge are nearly the same, the relations were found to be completely different. That is, the lattice-matched fluoride film on GaAs exhibited an orientation identical to that of the substrate (type A orientation), whereas the orientation of the film on Ge was rotated by 180°about the surface normal 〈111〉 axis (type B orientation). It was also found that the type A growth of the Ca x Sr1-x F2 films is maintained in the whole range of x on the As face of GaAs, while the growth types are partially or totally inverted in the lattice-mismatched fluoride films grown on the Ga face of GaAs and on Ge.

UR - http://www.scopus.com/inward/record.url?scp=0001090990&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001090990&partnerID=8YFLogxK

U2 - 10.1063/1.95732

DO - 10.1063/1.95732

M3 - Article

VL - 46

SP - 1131

EP - 1133

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

ER -