EPITAXIAL RELATIONS IN FLUORIDE FILMS GROWN ON GaAs left brace 111 right brace AND Ge(111) SUBSTRATES.

K. Tsutsui, H. Ishiwara, T. Asano, S. Furukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Epitaxial relations in Ca//x Sr//1//-//xF//2(0 less than equivalent to x less than equivalent to 1) and BaF//2 films grown on GaAs and Ge substrates were investigated by He ion channeling analysis and transmission electron microscopy. Though the lattice constants of GaAs and Ge are nearly the same, the relations were found to be completely different: the fluoride films on GaAs preferred to have an orientation identical to that of the substrate (type A orientation), whereas the orientation of the films on Ge was mainly rotated by 180 degree about the surface normal LT AN BR 111 RT AN BR axis (type B orientation). A hypothesis is proposed that the epitaxial relations in these systems are affected by the ionicity of the substrate as well as the lattice matching condition.

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsCarolyn Rubin Aita, K.S. SreeHarsha
PublisherMaterials Research Soc
Pages93-98
Number of pages6
ISBN (Print)093183712X
Publication statusPublished - Dec 1 1985

Publication series

NameMaterials Research Society Symposia Proceedings
Volume47
ISSN (Print)0272-9172

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Tsutsui, K., Ishiwara, H., Asano, T., & Furukawa, S. (1985). EPITAXIAL RELATIONS IN FLUORIDE FILMS GROWN ON GaAs left brace 111 right brace AND Ge(111) SUBSTRATES. In C. R. Aita, & K. S. SreeHarsha (Eds.), Materials Research Society Symposia Proceedings (pp. 93-98). (Materials Research Society Symposia Proceedings; Vol. 47). Materials Research Soc.