Epitaxial relations in group-IIa fluoride/Si(111) heterostructures

Tanemasa Asano; Hiroshi Ishiwara

doi:10.1063/1.93988

Epitaxial relations in group-IIa fluoride/Si(111) heterostructures

Tanemasa Asano, Hiroshi Ishiwara

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

CaF₂, SrF₂, BaF₂, and mixed (Ca,Sr)F ₂ films have been grown epitaxially on Si (111) substrates by vacuum evaporation. The epitaxial relation between these fluoride films and the substrates has been investigated by ion channeling analysis. Both the CaF ₂ and SrF₂ films prefer to have orientations rotated 180°about the normal to the substrate surface. In contrast, the vast majority of (Ca,Sr)F₂ films have orientations identical to those of the substrate, and the BaF₂ film is composed of a mixture of the two. Analysis was also made on a Si/CaF₂/Si(111) double heterostructure, which showed that the top Si film is again rotated 180°about the normal to the underlying CaF₂ surface.

Original language	English
Pages (from-to)	517-519
Number of pages	3
Journal	Applied Physics Letters
Volume	42
Issue number	6
DOIs	https://doi.org/10.1063/1.93988
Publication status	Published - Dec 1 1983
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.93988

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@article{cc68383da42846778664dc27a6c82f17,

title = "Epitaxial relations in group-IIa fluoride/Si(111) heterostructures",

abstract = "CaF2, SrF2, BaF2, and mixed (Ca,Sr)F 2 films have been grown epitaxially on Si (111) substrates by vacuum evaporation. The epitaxial relation between these fluoride films and the substrates has been investigated by ion channeling analysis. Both the CaF 2 and SrF2 films prefer to have orientations rotated 180°about the normal to the substrate surface. In contrast, the vast majority of (Ca,Sr)F2 films have orientations identical to those of the substrate, and the BaF2 film is composed of a mixture of the two. Analysis was also made on a Si/CaF2/Si(111) double heterostructure, which showed that the top Si film is again rotated 180°about the normal to the underlying CaF2 surface.",

author = "Tanemasa Asano and Hiroshi Ishiwara",

year = "1983",

month = dec,

day = "1",

doi = "10.1063/1.93988",

language = "English",

volume = "42",

pages = "517--519",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Epitaxial relations in group-IIa fluoride/Si(111) heterostructures

AU - Asano, Tanemasa

AU - Ishiwara, Hiroshi

PY - 1983/12/1

Y1 - 1983/12/1

N2 - CaF2, SrF2, BaF2, and mixed (Ca,Sr)F 2 films have been grown epitaxially on Si (111) substrates by vacuum evaporation. The epitaxial relation between these fluoride films and the substrates has been investigated by ion channeling analysis. Both the CaF 2 and SrF2 films prefer to have orientations rotated 180°about the normal to the substrate surface. In contrast, the vast majority of (Ca,Sr)F2 films have orientations identical to those of the substrate, and the BaF2 film is composed of a mixture of the two. Analysis was also made on a Si/CaF2/Si(111) double heterostructure, which showed that the top Si film is again rotated 180°about the normal to the underlying CaF2 surface.

AB - CaF2, SrF2, BaF2, and mixed (Ca,Sr)F 2 films have been grown epitaxially on Si (111) substrates by vacuum evaporation. The epitaxial relation between these fluoride films and the substrates has been investigated by ion channeling analysis. Both the CaF 2 and SrF2 films prefer to have orientations rotated 180°about the normal to the substrate surface. In contrast, the vast majority of (Ca,Sr)F2 films have orientations identical to those of the substrate, and the BaF2 film is composed of a mixture of the two. Analysis was also made on a Si/CaF2/Si(111) double heterostructure, which showed that the top Si film is again rotated 180°about the normal to the underlying CaF2 surface.

UR - http://www.scopus.com/inward/record.url?scp=30244512191&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30244512191&partnerID=8YFLogxK

U2 - 10.1063/1.93988

DO - 10.1063/1.93988

M3 - Article

AN - SCOPUS:30244512191

VL - 42

SP - 517

EP - 519

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

ER -