Epitaxial relations in lattice-matched (ca, sr)f2 films grown on gaas{111} and ge(111) substrates

Hiroshi Ishiwara, Kazuo Tsutsui, Tanemasa Asano, Seijiro Furukawa

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Epitaxial relations in lattice matched Ca0.42Sr0 58F2 films grown on GaAs(111), (111) and Ge(111) substrates were investigated by 2-MeV4He+ ion channeling and backscattering measurements. It was found that the epitaxial films on GaAs have an orientation indentical to that of substrates (type A), whereas those on Ge mainly exhibit an orientation rotated by 180° about the surface normal (111) axis (type B), though both substrates have nearly the same lattice constant.

Original languageEnglish
Pages (from-to)L803-L805
JournalJapanese Journal of Applied Physics
Volume23
Issue number10
DOIs
Publication statusPublished - Oct 1984

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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