EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON.

T. Asano, H. Ishiwara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherNorth-Holland Publ Co
Pages145-115
Number of pages31
ISBN (Print)0444007741
Publication statusPublished - Dec 1 1982

Publication series

NameMaterials Research Society Symposia Proceedings
Volume10
ISSN (Print)0272-9172

Fingerprint

Vacuum deposition

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Asano, T., & Ishiwara, H. (1982). EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON. In Materials Research Society Symposia Proceedings (pp. 145-115). (Materials Research Society Symposia Proceedings; Vol. 10). North-Holland Publ Co.

EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON. / Asano, T.; Ishiwara, H.

Materials Research Society Symposia Proceedings. North-Holland Publ Co, 1982. p. 145-115 (Materials Research Society Symposia Proceedings; Vol. 10).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Asano, T & Ishiwara, H 1982, EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON. in Materials Research Society Symposia Proceedings. Materials Research Society Symposia Proceedings, vol. 10, North-Holland Publ Co, pp. 145-115.
Asano T, Ishiwara H. EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON. In Materials Research Society Symposia Proceedings. North-Holland Publ Co. 1982. p. 145-115. (Materials Research Society Symposia Proceedings).
Asano, T. ; Ishiwara, H. / EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON. Materials Research Society Symposia Proceedings. North-Holland Publ Co, 1982. pp. 145-115 (Materials Research Society Symposia Proceedings).
@inproceedings{397654a467eb4a6aa1ee2f7c82c2ae67,
title = "EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON.",
author = "T. Asano and H. Ishiwara",
year = "1982",
month = "12",
day = "1",
language = "English",
isbn = "0444007741",
series = "Materials Research Society Symposia Proceedings",
publisher = "North-Holland Publ Co",
pages = "145--115",
booktitle = "Materials Research Society Symposia Proceedings",
address = "Netherlands",

}

TY - GEN

T1 - EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON.

AU - Asano, T.

AU - Ishiwara, H.

PY - 1982/12/1

Y1 - 1982/12/1

UR - http://www.scopus.com/inward/record.url?scp=0020305852&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020305852&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0020305852

SN - 0444007741

T3 - Materials Research Society Symposia Proceedings

SP - 145

EP - 115

BT - Materials Research Society Symposia Proceedings

PB - North-Holland Publ Co

ER -