EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON.

Tanemasa Asano, H. Ishiwara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherNorth-Holland Publ Co
Pages145-115
Number of pages31
Volume10
ISBN (Print)0444007741
Publication statusPublished - Dec 1 1982
Externally publishedYes

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Vacuum deposition
vacuum deposition

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Asano, T., & Ishiwara, H. (1982). EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON. In Materials Research Society Symposia Proceedings (Vol. 10, pp. 145-115). North-Holland Publ Co.

EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON. / Asano, Tanemasa; Ishiwara, H.

Materials Research Society Symposia Proceedings. Vol. 10 North-Holland Publ Co, 1982. p. 145-115.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Asano, T & Ishiwara, H 1982, EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON. in Materials Research Society Symposia Proceedings. vol. 10, North-Holland Publ Co, pp. 145-115.
Asano T, Ishiwara H. EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON. In Materials Research Society Symposia Proceedings. Vol. 10. North-Holland Publ Co. 1982. p. 145-115
Asano, Tanemasa ; Ishiwara, H. / EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON. Materials Research Society Symposia Proceedings. Vol. 10 North-Holland Publ Co, 1982. pp. 145-115
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