EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON.

T. Asano, H. Ishiwara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherNorth-Holland Publ Co
Pages145-115
Number of pages31
ISBN (Print)0444007741
Publication statusPublished - Dec 1 1982

Publication series

NameMaterials Research Society Symposia Proceedings
Volume10
ISSN (Print)0272-9172

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Asano, T., & Ishiwara, H. (1982). EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON. In Materials Research Society Symposia Proceedings (pp. 145-115). (Materials Research Society Symposia Proceedings; Vol. 10). North-Holland Publ Co.