Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface

Tetsuroh Shirasawa, Kenjiro Hayashi, Seigi Mizuno, Satoru Tanaka, Kan Nakatsuji, Fumio Komori, Hiroshi Tochihara

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)

Abstract

Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in the unit cell, which explains the fact that the structure is robust against air exposure. Scanning tunneling spectroscopy measured on the SiON layer shows a bulk SiO2-like band gap of ∼9eV. Great potential of this new epitaxial layer for device applications is described.

Original languageEnglish
Article number136105
JournalPhysical review letters
Volume98
Issue number13
DOIs
Publication statusPublished - Mar 30 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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