Three dimensionally aligned epitaxial Bi4Ti3O12 films were grown on SrTiO3 (001) and LaAlO3 (001) substrates with and without a semiconductive La2CuO4 bottom layer. The leakage current and crystallographic properties of Bi4Ti3O12 were found to be markedly different from ABO3-type ferroelectric such as Pb(Zr, Ti)O3, BaTiO3, and SrTiO3. The d-spacings of Bi4Ti3O12 depend markedly on the substrate material, suggesting that the amount of misoriented domains formed to relieve epitaxial stress was less than that in ABO3-type ferroelectrics. This epitaxial stress effect was observed even in relatively thick films 1500 Å thick. Furthermore, the time dependence of the leakage current in Bi4Ti3O12 was substantially reduced compared to those in the ABO3-type ferroelectrics.
|Number of pages||7|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - Nov 1996|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)