Epitaxial YBa2Cu3O7-y thin-film growth on NdGaO3 substrate by laser ablation

Masashi Mukaida, Shintaro Miyazawa, Masahiro Sasaura, Hiroki Yonezawa

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

As-grown superconducting YBa2Cu3O7-y thin films with various thicknesses were successfully grown on lattice-matched NdGaO3 substrates by ArF laser ablation deposition. An as-grown 2000-Å-thick film has a zero-resistance temperature (Tc) at 90 K and a 170-Å-thick film has a Tc at 88 K. The existence of a thin interfacial diffusion layer between a 170-Å-thick film and the substrate was observed by Auger electron spectroscopy. Rutherford backscattering spectroscopy suggest that as-grown YBa2Cu3O7-y films on NdGaO3 substrates are high-quality crystals. It is demonstrated that the NdGaO3 has considerable potential as an electronic substrate material by less interfacial diffusion layer and good crystallinity of grown thin films.

Original languageEnglish
Pages (from-to)3399-3401
Number of pages3
JournalJournal of Applied Physics
Volume69
Issue number5
DOIs
Publication statusPublished - Dec 1 1991
Externally publishedYes

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laser ablation
thick films
thin films
Auger spectroscopy
electron spectroscopy
crystallinity
backscattering
electronics
spectroscopy
crystals
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Epitaxial YBa2Cu3O7-y thin-film growth on NdGaO3 substrate by laser ablation. / Mukaida, Masashi; Miyazawa, Shintaro; Sasaura, Masahiro; Yonezawa, Hiroki.

In: Journal of Applied Physics, Vol. 69, No. 5, 01.12.1991, p. 3399-3401.

Research output: Contribution to journalArticle

Mukaida, Masashi ; Miyazawa, Shintaro ; Sasaura, Masahiro ; Yonezawa, Hiroki. / Epitaxial YBa2Cu3O7-y thin-film growth on NdGaO3 substrate by laser ablation. In: Journal of Applied Physics. 1991 ; Vol. 69, No. 5. pp. 3399-3401.
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